1 / 9

CMOS fabrication process overview

CMOS fabrication process overview. 8-2. P-well on N-substrate. . . . . . . . . Steps : N-type substrateOxidation, and mask (MASK 1) to create P-well (4-5?m deep) P-well doping P-well acts as substrate for nMOS devices. The two areas are electrically isolated using thick field oxide (and often isolation implants [not shown here]).

gur
Télécharger la présentation

CMOS fabrication process overview

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

    1. CMOS fabrication process overview 8-1

    2. CMOS fabrication process overview 8-2 P-well on N-substrate

    3. CMOS fabrication process overview 8-3 Polysilicon Gate Formation

    4. CMOS fabrication process overview 8-4 nMOS P+ Source/Drain difusion self-aligned to Poly gate

    5. CMOS fabrication process overview 8-5 pMOS N+ Source/Drain difusion self-aligned to Poly gate

    6. CMOS fabrication process overview 8-6 pMOS N+ Source/Drain difusion, contact holes & metallisation

    7. CMOS fabrication process overview 8-7 CMOS N-well process

    8. CMOS fabrication process overview 8-8

    9. CMOS fabrication process overview 8-9

    10. CMOS fabrication process overview 8-10

More Related