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Introduction to Nanoheat; Aspel group

Introduction to Nanoheat; Aspel group. 20030910. TCAD. Collision-dominated  quasi-ballistic. Double gate device/ quantum confinement. Conduction subband vs. position. Electron distribution function vs. position under high gate bias (top of the barrier).

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Introduction to Nanoheat; Aspel group

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  1. Introduction toNanoheat; Aspel group 20030910

  2. TCAD • Collision-dominated  quasi-ballistic

  3. Double gate device/ quantum confinement

  4. Conduction subband vs. position

  5. Electron distribution function vs. position under high gate bias (top of the barrier)

  6. Average electron velocity (high gate bias)

  7. Key concepts to develop a ballistic theory

  8. E-k relation (top of the barrier) under high gate bias: Vds=0/ small/ large

  9. I-V characteristic for ballistic MOSFET (T>0, nondegenerate)

  10. Ballistic limit characteristic vs. measured I-V

  11. Backscattering at the top of the barrier

  12. Average carrier velocity & inversion layer density (ballistic/ with scattering)

  13. Effect of scattering within channel

  14. Key concepts to develop a scattering theory

  15. The scattering model

  16. Transmission coefficient under low drain bias

  17. Relating mean-free-path to a macroscopic quantity

  18. Transmission coefficient under high drain bias

  19. Electron injected into the channel undergoing its first scattering event

  20. Scattering event in momentum space

  21. Probability of it returning to the source

  22. Classical ballistic/ quantum ballistic/ drift-diffusion

  23. Essential physical picture of steady-state carrier transport in the nanoscale MOSFET bottleneck

  24. Monet • Continuum classical heat diffusion equation • Boltzmann transport equation (phonon) • Q’’’: electron-phonon interactions

  25. Energy transfer process

  26. Monte Carlo simulation • Semi-classical approach (1) Scattering rate (2) Free flight (F=ma) • Fermi-Golden Rule

  27. Heat generation profile (10nm DGSOI)

  28. Cornell Aspel group • Primary research area- develop high speed interconnect system for chip-to-chip communication including receivers, transmitters, link architectures in CMOS, and stochastic encoding

  29. Optical properties of sapphire substrate 300nm~ (6um)

  30. Commercial 850nm GaAs/AlGaAs-quantum-well vertical-cavity surface emitting lasers (VCSELs) and 980nm InGaAs/AlGaAs VCSELs were used as front and back emitting structures, respectively.

  31. “A high performance SiGe/Si MQW heterojunction phototransistor,” IEEE Trans. Electron Device (under revision), 2003

  32. “A 7mW 1Gbps CMOS Optical Receiver For Through Wafer Communication”, accepted Proceedings of the International Symposium on Circuits and Systems, 2003

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