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ITRS/ERD ITWG Emerging Research Devices Work Group Carbon-based electronics

ITRS/ERD ITWG Emerging Research Devices Work Group Carbon-based electronics. Pro high µ (useful?) λ ≈ 0.3-0.5 µm (useful?) large v F high I on /I off UTB → no SCE, small L g high current capability small C g small blocks (RO) proven. Con

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ITRS/ERD ITWG Emerging Research Devices Work Group Carbon-based electronics

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  1. ITRS/ERD ITWGEmerging Research Devices Work GroupCarbon-based electronics

  2. Pro high µ (useful?) λ≈ 0.3-0.5 µm (useful?) large vF high Ion/Ioff UTB → no SCE, small Lg high current capability small Cg small blocks (RO) proven Con controlled growth (length, diameter, chirality) controlled assembly in a circuit Ioff vs. Rc (ohmic contact) [Eg] CNT-FET no breakthrough vs. Si CMOS: expects ≤ few x improvement ? • non-conventional FET • Schottky barrier FET • BTBT-FET • DoS

  3. Pro high µ large vF UTB → no SCE, small Lg high current capability small Cg many devices proven Con controlled growth (large area, chirality(?)) low Ion/Ioff (low to no gap) controlled edge Graphene-FET no breakthrough vs. Si CMOS: expects ≤ few x improvement ? • Eg engineering with W • bi-layer • substrate effect • Lmin; variability

  4. Pro potential for RT operation many devices proposed Con functionality t.b. precised Non-conventional devices which device + architecture for breakthrough?

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