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Chapter 16-3. MOS C-V characteristics

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Chapter 16-3. MOS C-V characteristics

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    1. 1 Chapter 16-3. MOS C-V characteristics The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage A very powerful diagnostic tool for identifying any deviations from the ideal in both oxide and semiconductor Routinely monitored during MMOS device fabrication Measurement of C-V characteristics Apply any dc bias, and superimpose a small (15 mV) ac signal Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz The dc bias VG is slowly varied to get quasi-continuous C-V characteristics

    2. 2 C-V characteristics of MOS-capacitor on p- and n-type Si

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