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Summary of Simulations from KIT

Summary of Simulations from KIT. Robert Eber, Martin Printz. Contents. Simulation all carried out with Synopsys Sentaurus Layout Performance Un-irradiated charge collection. Electric Fields – n- bulk before irradiation. Comparing (p90,w20), (p240,w20), (p240,w60), (p90,w60)

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Summary of Simulations from KIT

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  1. Summary ofSimulationsfrom KIT Robert Eber, Martin Printz

  2. Contents • Simulation all carried out withSynopsysSentaurus • Layout • Performance • Un-irradiatedchargecollection

  3. Electric Fields – n-bulkbeforeirradiation • Comparing(p90,w20), (p240,w20), (p240,w60), (p90,w60) • Highestfieldsforverysmallwidth/pitch • (p90,w60) not converging (too high fields)

  4. P-stop Simulation • P-type sensorsrequirestripisolation– bestconfiguration? • Sensor • Implant 20µm, pitch 90µm • w/p = 0.22 • P-stopimplantmaxconc. 5x1016cm-2 Atoll SimulatedAtollversion P-stopwidthvaryingbetween 4µm and 8µm P-stopdistancebetweennear-strip and half-pitch P-stopwidth Distance = 0 Distance = 1

  5. Electric Field with p-stop • High fieldswithlowdistancetostrip (breakdown) • p-stopat large distancetostripandsmallwidthensuregood HV operation E (V/cm) Strip Strip Potential (V)

  6. Effectsof p-stop on Eta Distribution • P-stopaffectselectricfieldandthereforechargesharingbetweenstrips • Effect on eta (chargesharingbetweenstrips) Eta also depends on oxidecharge (irrad. Sensors) More chargesharingwithhigherirrad. (onlyoxidechargesimulatedhere) CBC: lowerchargesharinggoodforbinaryreadout

  7. Electric Field p-spray • Cut 100nm belowoxide • P-spray conc = 4e15cm-3 • Qox=1e11cm-2 • 200µm ImplantDepth

  8. Irradiated Strip Sensors • Effective Irradiation Model (tunedespeciallyforprotons)

  9. Electric Field atthe Strips – n-bulkF=1e15neq/cm2 Increase in Eworsewithirradiation High Qox Low Qox

  10. Electric Field atthe Strips – n-bulkF=3e14neq/cm2 • Soft breakdown due tovery high electricfieldsatthestripswithhigheroxidecharge

  11. P-bulk

  12. Electric Fields – p-bulk Sensors • Comparisonbetween 320µm and 200µm thick FZ p-bulksensors • Not muchhigherelectricfieldsthanfor 320µm devicesatstrips (centerofstrip) • Higher fields in thebulk • Lowerfieldsforhigheroxidecharge – intrinsicallygood! Higher Qox Higher Qox

  13. Electric Fields atthe Strips – FZ320P • Atlowoxidecharge: Electricfieldsincreasewithfluence • Not critical Alu overhang Strip P-stop

  14. Electric Fields atthe Strips – FZ320P • At high oxidecharge, electricfieldsevenlower… (tbc) Alu overhang Strip P-stop

  15. Electric Fields atthe Strips – FZ200P • 200µmthicksensors • Influenceof p-stopdoping after irradiation: higherfieldsathigherdoping P-stop Alu overhang Strip

  16. Electric Fields atthe Strips – FZ200P • High p-stopdopingand high oxidecharge: very high electricfieldsat p-stop Alu overhang Strip

  17. Summary ofdesign (electricfields) • Beforeirradiation • Larger pitch/widthreduceselectricfieldsbetweenthestrips • P-stopshouldbeplacedawayfromthestrips • Small p-stopwidthforlowerelectricfieldsat p-stop • After irradiation • N-bulksensorsperformworsewithhigheroxidecharge • Electricfields in p-bulksensorslowerwithhigheroxidechargeatthestrips • 200µm thicksensorsshow same behaviouras 320µm • High p-stopdopingmaybeworseafter irradiation?

  18. Performance

  19. Charge Collection Efficiency

  20. Charge Loss between Strips

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