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Growth of MgO-based tunnel junctions

Rate:1.8 Å /Min. Rate:0.6 Å /Min. 15nm. 10nm. nm 1. -1. 0. 1 m m. 0. 0. 1 m m. 0. 0. 1 m m. 3 nm MgO. Ge buffer. Ge(100). Epitaxial growth and structural characterization of MgO-based magnetic tunnel junctions and ferromagnetic/MgO/semiconductor heterostructures.

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Growth of MgO-based tunnel junctions

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  1. Rate:1.8 Å/Min Rate:0.6 Å/Min 15nm 10nm nm 1 -1 0 1mm 0 0 1mm 0 0 1mm 3 nm MgO Ge buffer Ge(100) Epitaxial growth and structural characterization of MgO-based magnetic tunnel junctions and ferromagnetic/MgO/semiconductor heterostructures Y.F. Chiang, K. Pi, Y. Li ,X. Tan, H. W. K. Tom and R.K. KawakamiDepartment of Physics and Astronomy, University of California, Riverside, CA 92521 Growth of MgO-based tunnel junctions Growth of FM/MgO/semiconductors heterostructures Ge, GaAs Fe/Fe Grow 3nm MgO at 25°C 3 nm MgO GaAs(100) 0.4mm MgO/Fe • Layer by layer growth of MgO barrier on Fe. • TMR measured at RT and low temperature. • Use SHG to probe the Fe/MgO interfacial • properties. • Grow atomically flat MgO on Ge(100), GaAs(100). • Growth rate is crucial for flatness of MgO/GaAs(100).

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