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SOI MEMS Platform HTA General Assembly November 12 – 13, 2013

SOI MEMS Platform HTA General Assembly November 12 – 13, 2013. Contact: Panu.Pekko@vtt.fi. Status Report. Platform / Roadmap / Flagship Title: SOI MEMS Platform. Short Description: Platform purpose To create flexibility in designing and manufacturing new components Definition

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SOI MEMS Platform HTA General Assembly November 12 – 13, 2013

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  1. SOI MEMS Platform HTA General Assembly November 12 – 13, 2013

  2. Contact: Panu.Pekko@vtt.fi Status Report Platform / Roadmap / Flagship Title: SOI MEMS Platform Short Description: Platform purpose • To create flexibility in designing and manufacturing new components Definition • Platform composes of process equipment, steps, modules and needed personnel of HTA partners (e.g. CSOI-AlN pMEMS platform of VTT) Activity in practice • Network of four platform managers having regular Telcos & meetings • Gateway to services and facilities of other partners (= matchmaker) • Standardized documents (RFQ-template, customer case database, equipment list) • Main challenge: (internal) marketing => project managers and planners

  3. Contact: Panu.Pekko@vtt.fi Status Report Platform / Roadmap / Flagship Title: SOI MEMS Platform Status & Partners (institutes, departments, contact): CEA-Leti: Jean-Philippe.Polizzi@cea.fr CSEM: Arno.HOOGERWERF@csem.ch FhG: ENAS/IMS/IPMS/ISIT: Maik.Wiemer@enas.fraunhofer.de VTT: Panu.Pekko@vtt.fi Vision, Mission, Strategy: Vision: Platform for research, prototyping and pilot production as well as production ramp-up services Mission: Helping researcher to do their work, through networking, creating new projects and fostering innovations

  4. Contact: Panu.Pekko@vtt.fi Status Report Platform / Roadmap / Flagship Title: SOI MEMS Platform Recent Activities (white papers, joint projects, joint PR, …) • 5 inquiries handled in 2013 (3 closed without contracts, 2 still underway) • CSEM: Philippe Niedermann replaced by Arno Hoogerwerf Next steps: • Standard activities continue • Participation to trade show under HTA banner planned (experiences of Semicon 2012 utilized)

  5. Challenge: IPDiAdevelops in collaboration with Leti a unique technology to integrate a wide range of capacitor values on silicon. A high K dielectric with coverage on high aspect ratio trenches is required. Leti does not have the technology. Solution: Fhg-CNT has the perfect solution Added value of HTA: Access to capabilities not available within a single partner Project was not feasible otherwise. SOI MEMS Platform: success stories Development of high density capacitors 50µm

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