1 / 15

Thermal Analysis of a Integrated Power Electronics Module

Thermal Analysis of a Integrated Power Electronics Module. MANE 6980 Nicholas Palumbo 12/05/2012. IGBT. In order to determine losses of the integrated power electronics module, the design engineer needs to determine which semiconductor device the module will make use of.

meira
Télécharger la présentation

Thermal Analysis of a Integrated Power Electronics Module

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Thermal Analysis of a Integrated Power Electronics Module MANE 6980 Nicholas Palumbo 12/05/2012

  2. IGBT • In order to determine losses of the integrated power electronics module, the design engineer needs to determine which semiconductor device the module will make use of. • The main heat losses associated with this analysis are due to switching and conduction losses of the IGBT. • Integrated power modules are used to power three phase AC motor drives. The figure below better depicts the internal of the power electronics module. Switch 1,2,3,4,5, and 6 are in parallel. • The IGBT chosen for this application is the Powerex CM1800HCB-34N single IGBTMOD HVIGBT Module, rated for 1800 Amperes and 1700 Volts. • The IGBT module consists of one IGBT transistor in a reverse-connected super-fast recovery free-wheel diode. • The figure to the right depicts the model chosen for this analysis. IGBT Module IGBT Circuit Diagram

  3. Semiconductor Losses • IGBT power losses are divided into three groups: conduction losses, switching losses and blocking losses (which are normally disregarded). • Conduction losses deal with a series connection of DC voltage source of the on-state zero current of the collector-emitter voltage and resistance. • Switching losses deal with turn-on energy losses in the IGBT taking into account the switch-on energy and the switch-on energy caused by the reverse-recovery of the free-wheeling diode; switching losses in the IGBT are the product of switching energies and the switching frequency.

  4. IGBT Losses

  5. Cold Plate Physical Design • Cold plate designs include two main categories based on piping configurations: • 1. Series Piping • 2. Parallel Piping • For this analysis three separate cold plate designs will be looked at to determine the best configuration. Below are the three cold plate designs. Option 1: Series Option 2: Parallel Option 3: Parallel-Series

  6. Pressure Drop Calculations • Pressure drop calculations were completed for all cold plate designs. • The importance of a pressure drop calculation is based on the overall fluid system characteristics. • Pressure drop calculations were completed for each cold plate design. Graphs below are representing pressure drop vs. cold plate piping distance. Option 1: Series 4.96 PSI Option 3: Parallel-Series 7.6PSI Option 2: Parallel 2.67 PSI

  7. ANSYS Pressure Drops • ANSYS pressure drops were completed for cold plate option one and two.

  8. Thermal Resistance Network Thermal Resistance Circuit for Cold Plate Option One Cold Plate Resistance Breakdown Thermal Resistance Circuit for Cold Plate Option Two

  9. Temperature Profile of Cold Plates

  10. ANSYS Meshing of Cold Plate Option One

  11. ANSYS Thermal Results of Cold Plate Option One

  12. Meshing of Cold Plate Option Two

  13. ANSYS Thermal Results of Cold Plate Option Two

  14. ANSYS Thermal Results of a Modified Version of Cold Plate Option Two

  15. Conclusion

More Related