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2008 Litho ITRS Update

2008 Litho ITRS Update. Lithography iTWG December 2008. Outline. Lithography Potential Solutions Multiple Targets and Solutions Double Exposure Challenges. ITRS Working Group. United States Greg Hughes and Michael Lercel (Chairs) Japan Iwao Higashikawa (Chair) Europe

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2008 Litho ITRS Update

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  1. 2008 Litho ITRS Update Lithography iTWG December 2008

  2. Outline • Lithography Potential Solutions • Multiple Targets and Solutions • Double Exposure Challenges

  3. ITRS Working Group • United States • Greg Hughes and Michael Lercel (Chairs) • Japan • Iwao Higashikawa (Chair) • Europe • Mauro Vasconi (Chair) • Taiwan • Korea • Cho (Chair)

  4. 32nm HP 22nm HP 45nm HP Preferred Technology by Year 2008 SEMATECH Litho Forum survey results

  5. 193 nm Immersion with H2O 193 Immersion double patterning 193 nm Immersion Double Pattern EUV (DRAM) Immersion other fluids ML2, Imprint Potential Solutions 2008 - 2009 EUV 193 nm Immersion Double Pattern ML2, Imprint

  6. 2008 SEMATECH Litho Forum survey results Looking at 16nm Half Pitch

  7. 2008 SEMATECH Litho Forum survey results

  8. MPU Printed Gate Length Change

  9. 2007 Format

  10. 2008 Lithography Technology Requirements DRAM FLASH MPU

  11. MPU Details Restricted Definition to Single Litho Tool Restricted Definition of CD - one direction, single pitch, single iso dense ratio.

  12. ITRS Dose vs LER • Simple shot-noise model predicts 1/dose relationship between LER and dose Data courtesy of Dr. P. Naulleau (LBNL) and Dr. T. Wallow (AMD)

  13. Resist Table

  14. Double Patterning Challenge

  15. Double Exposure • Simple double exposure: each feature is exposed independently (2006 ITRS) • Mask Image Placement tightens 70% • Mask Mean to target has to be matched for the two masks MTT/2 • 2007 ITRS- Define Double spaces (Independent Images) • Adds wafer etch bias uniformity and repeatability. • Define Double Lines (Dependent Images) • Mask Image Placement tightens • Mask CD 3 sigma tightens

  16. 2008 Update Mask Requirements (DE/DP) Note these are issues with LELE, LLE Not the spacer Technology

  17. Summary • Lithography potential solutions are being narrowed for 45nm DRAM half-pitch • CoO is Driving 193 Immersion Single Exposure • 2009 update will be major decision point for 32nm DRAM half-pitch (Double Patterning or EUV) • LER and CD Control Still remain as a Dominant Issue • Relief on some near term specifications but imaging challenges remain • Flash pushing Half Pitch and Double Patterning • Overlay requirements for the Dependent Geometry will remain the challenge • Contact Imaging Remains a challenge for all device types • Double exposure / patterning requires a complex set of parameters when different exposures are used to define single features

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