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Bolometer Fabrication
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Presentation Transcript
Bolometer Fabrication Ashing of PI2737 in Oxygen Plasma Au Contact Au Absorber SiGe PI 2737 Sacrificial Layer Al Mirror Ti Arm SiN Insulation Layer P- Si Substrate
Bolometer: Resistivity & Temperature Coefficient of Resistance (TCR) Variation With Temperature
Bolometer: Noise Analysis of two bolometers and the corresponding Normalized Hoogie Coefficient for 1/f-noise (αH/N) determined at 10 Hz frequency Where is noise voltage power spectral desity in V2/Hz Ib is the bias current R is the resistance of the device N is the number of fluctuators
This material is based in part by work supported by the National Science Foundation ECS-0322900
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