'Body effect' diaporamas de présentation

Academic training microelectronics nanoelectronics monolithic pixel detectors 12-14 January 2004

Academic training microelectronics nanoelectronics monolithic pixel detectors 12-14 January 2004. Pierre Jarron Lecture 2 CERN EP-MIC. Nanoelectronics. Microelectronics and HEP instrumentation Brief history of microelectronics Evolution of microelectronics in HEP Microelectronics at LEP

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IL 2222 - MOSFET

IL 2222 - MOSFET. Professor Ahmed Hemani Dept. Of ES, School of ICT, KTH Kista Email: hemani@kth.se Website: www.it.kth.se/~hemani. MOS Capacitor, MOSFET. MOS: M etal- O xide- S emiconductor. ~1.5nm thick Few oxide molecules Usually made of Poly Silicon. V g. V g. gate. gate. metal.

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Noise

Noise. Resistor Thermal Noise. Example. Vnr1sqr=2.3288 x 10 -19 Vnr3sqr=7.7625 x 10- 20 Vnoutsqr =3.1050 x10 -19. Analytical Versus Simulation. Popular Interview Question. Noise Spectrum Shaping by a Low Pass Filter. As R increases, 4kTR increases, but the bandwidth decreases.

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Lecture 4: Nonideal Transistor Theory

Lecture 4: Nonideal Transistor Theory. Outline. Nonideal Transistor Behavior High Field Effects Mobility Degradation Velocity Saturation Channel Length Modulation Threshold Voltage Effects Body Effect Drain-Induced Barrier Lowering Short Channel Effect Leakage Subthreshold Leakage

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VLSI System Design

VLSI System Design. Lect. 2.2 CMOS Transistor Theory2. Engr. Anees ul Husnain ( anees.buzdar@gmail.com ) Department of Electronics & Computer Systems Engineering, College of Engineering & Technology, IUB. Outline . . . Non-ideal Transistor Behavior High Field Effects

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Introduction to CMOS VLSI Design Lecture 15: Nonideal Transistors

Introduction to CMOS VLSI Design Lecture 15: Nonideal Transistors. David Harris Harvey Mudd College Spring 2004. Outline. Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation Body Effect Leakage Temperature Sensitivity

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Introduction to CMOS VLSI Design Nonideal Transistors

Introduction to CMOS VLSI Design Nonideal Transistors. Outline. Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation Body Effect Leakage Temperature Sensitivity Process and Environmental Variations Process Corners. Ideal Transistor I-V.

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VLSI Design Lecture 3a: Nonideal Transistors

VLSI Design Lecture 3a: Nonideal Transistors. Outline. Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation Body Effect Leakage Temperature Sensitivity Process and Environmental Variations Process Corners. Ideal Transistor I-V.

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???????? _2

???????? _2. Chapter 2 Basic MOS Device Physics. MOS Device Structure. NMOS and PMOS with Well. MOS Symbols. MOS Channel Formation. I/V Characteristics. I/V Characteristics. I/V Characteristics (cont.). I/V Characteristics (cont.). Operation in Triode Region.

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Review of MOSFET Device Modeling

Review of MOSFET Device Modeling. MOS Device Structure. NMOS and PMOS with Well. MOS Symbols. MOS Channel Formation. I/V Characteristics. I/V Characteristics. I/V Characteristics (cont.). I/V Characteristics (cont.). Operation in Triode Region. Operation in Active (Saturation) Region.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 21 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 21 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Fully biased n-MOS capacitor. V G. Channel if V G > V T. V S. V D. E Ox,x > 0. e - e - e - e - e - e -. n+. n+. p-substrate.

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Lecture 7: Power

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Semiconductor Device Modeling and Characterization EE5342, Lecture 25 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 25 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. MOSFET Device Structre Fig. 4-1, M&A*. n-channel enh. circuit model. G. RG. C gd. RDS. C gs. RD. S. D. C bd. RB. C bs. Idrain. C gb.

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Lecture 08: Pass Transistor Logic

Lecture 08: Pass Transistor Logic. NMOS Transistors in Series/Parallel. Primary inputs drive both gate and source/drain terminals NMOS switch closes when the gate input is high Remember - NMOS transistors pass a strong 0 but a weak 1. A. B. X = Y if A and B. X. Y. A.

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Channel Length Modulation

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Lecture #38

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Lecture #38

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Lecture #38

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Lecture 20

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