'Gaas cr' diaporamas de présentation

MC of CBM Silicon Tracker Status Report

MC of CBM Silicon Tracker Status Report. Valeri Saveliev Obninsk State University, Russia 10.05.2004 GSI, Darmstadt. CBM Spectrometer and Silicon Tracker (STS). STS: Station z Rmin Rmax [cm] [cm] [cm] 1 5 0.5 2.5 2 10 0.5 5.0 3 20 1.0 10.0 4 30 1.5 15.0 5 40 2.0 20.0

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GaAs radiation imaging detectors with an active layer thickness up to 1 mm.

GaAs radiation imaging detectors with an active layer thickness up to 1 mm. D.L.Budnitsky, O.B.Koretskaya , V.A. Novikov, L.S.Okaevich A.I.Potapov , O.P.Tolbanov , A.V.Tyazhev . Siberian Physical Technical Institute , Russia, Tomsk Fax: +7-3822-233034, E-mail: tyazhev@elefot.tsu.ru. Outline.

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167 views • 16 slides

Detailed analysis of quasi- ohmic contacts to high resistive GaAs:Cr structures

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