'Gate dielectric' diaporamas de présentation

Organic Thin Film Transistor

Organic Thin Film Transistor. Edited by Song Ho, Kim. Contents. 1. What is the OTFT? 2. Structure of OTFT Application of OTFT Mechanism Operation 5. Pentacene TFT - Proposed Research - Fabrication of Pentacene TFT Characteristics & Analysis

4.42k views • 39 slides

Z. Celik-Butler and M. S. Rahman

Degradation in MOSFET Multi-Stack High-k Gate Dielectrics Due to Hot Carrier and Constant Voltage Stress. Z. Celik-Butler and M. S. Rahman. The Nanotechnology Research and Teaching Facility, Electrical Engineering Department University of Texas at Arlington, Arlington, TX 76019.

526 views • 39 slides

Trends in semiconductor technology

Trends in semiconductor technology. Jurriaan Schmitz Chairholder of Semiconductor Components MESA+ institute University of Twente. The Microstrip Gas Counter and its application in the ATLAS inner tracker. Fragment of my introductory talk, October 14, 1994:

1.79k views • 37 slides

Front End Process

Front End Process. 2002 ITRS Conference July 24, 2002 San Francisco, CA. Purpose. Review Linkage between FEP Technology Areas and FEP difficult challenges Identify year 2002 updates Identify year 2003 projects and plans. FEP Technology Areas.

420 views • 29 slides

Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy

IEEE Device Research Conference, June 24-27 2013, Notre Dame. Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy.

257 views • 25 slides

MOSFET Scaling

615 views • 21 slides

ITRS Conference FEP- TWG Report July 16, 2003

ITRS Conference FEP- TWG Report July 16, 2003. Starting Materials: H. Huff, D. Meyers Surface Preparation: Jeff Butterbaugh, D. Riley Thermal Films: C. Osburn, H. Huff FEOL Etch: Y. Kim, G. Smith Doping: L. Larson, D. Mercer DRAM Trench Capacitor: Europe FEP, B. Vollmer

340 views • 19 slides

Electronic states at junctions of molecular semiconductors.

299 views • 19 slides

PIDS Scope

PIDS Status and Key Issues: 2003 ITRS Peter M. Zeitzoff for PIDS Technology Working Group ITRS Open Meeting July 16, 2003 San Francisco. PIDS = P rocess I ntegration, D evices, and S tructures Main concerns Process integration and full process flows

370 views • 17 slides

* sanghoon_lee@ece.ucsb

Record Extrinsic Transconductance (2.45 mS/?m at V DS = 0.5 V) InAs/In 0.53 Ga 0.47 As Channel MOSFETs Using MOCVD Source-Drain Regrowth.

738 views • 14 slides

* sanghoon_lee@ece.ucsb

Record Extrinsic Transconductance (2.45 mS/?m at V DS = 0.5 V) InAs/In 0.53 Ga 0.47 As Channel MOSFETs Using MOCVD Source-Drain Regrowth.

276 views • 14 slides

Next Generation Integrated Circuits

Next Generation Integrated Circuits. 300 mm wafers Copper metallization Low-K dielectric under interconnect lines High-K dielectric under gate Silicon-on-insulator (SOI) Strained silicon New gate metals Dual-core CPU chips. Next Generation Integrated Circuits. 300 mm wafers

145 views • 14 slides

PRESENTATION ON

PRESENTATION ON TRI GATE TRANSISTOR PREPARED BY: SANDEEP (1706435). INTRODUCTION.

123 views • 10 slides

ROOT used in Test and Measurement Industry

ROOT used in Test and Measurement Industry. ROOT Workshop Mar 2013 Agilent Technologies Masaharu Goto. How we use ROOT. Data Visualization High V olume Data L ogging Curve Fitting. Electronic Device Material. Dielectric Material is very important in Electronics Industry

175 views • 9 slides

ITRS 2003 Front End Processing Challenges

94 views • 8 slides

Low Power Device Issues Peter M. Zeitzoff Panel Discussion

170 views • 7 slides

s. s. s. s. s. s. s. s. s. s. The key to making high mobility polymer thin film transistors: nucleation of crystals off of the gate dielectric Stanford MRSEC, DMR-0213618.

83 views • 1 slides