'Surface potential' diaporamas de présentation

Influential factors:

Chapter 2 Electrode/electrolyte interface: ----structure and properties. Electrochemical reactions are interfacial reactions , the structure and properties of electrode / electrolytic solution interface greatly influences the reaction. Influential factors:.

813 views • 73 slides

Influential factors:

Chapter 2 Electrode/electrolyte interface: ----structure and properties. Electrochemical reactions are interfacial reactions , the structure and properties of electrode / electrolytic solution interface greatly influences the reaction. Influential factors:.

996 views • 73 slides

Potential near a point charge

Potential near a point charge. A. B. +. What is the potential difference between A and B?. Change in potential along a short section of the path:. A. B. Now integrate along the path:. +. Change in potential along a short section of the path:. A. B. +.

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NMOS

NMOS. PMOS. K-Map of NAND gate. CMOS Realization of NAND gate. K-Map. CMOS -NOR gate. CMOS Realization of NOR gate. Only one threshold voltage drop across series of nMOS transistors. Conducting. AND gate. Fig: CMOS Realization of AND gate. P tree.

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The electrical double layer

The electrical double layer. D is the static dielectric constant. From Coulombs equation,. By integration we can estimate the energy to separate a charge from the surface. In water W~1.9x10 -20 J, In Air W~1.5x10 -18 J Compare this with thermal energy 1 kT ~4.0x10 -21 J

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UW LISA Torsion Balance Experiment Scott E Pollack with Stephan Schlamminger, Charlie Hagedorn, &

UW LISA Torsion Balance Experiment Scott E Pollack with Stephan Schlamminger, Charlie Hagedorn, & Jens Gundlach Center for Experimental Nuclear Physics and Astrophysics University of Washington Workshop on Charging Issues in Experimental Gravity July 27, 2007 LIGO #G070478-00-R. V.

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Mark Davies Trevor Charlton Denis Baudin

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An Application of the Method of Images: Who would have thought it?

An Application of the Method of Images: Who would have thought it? David M. Schaefer, Matthew Reames * , Jeremy Robinson Towson University Donald Rimai NexPress Inc. Ronald Reifenberger, Brian Walsh Purdue University * Graduate School at U. of MD, College Park. Outline.

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Microcantilevers III

The cantilever based sensors can be classified into three groups General detection of any short range forces : Scanning probe microscopy Detection of mass attachment: based on changes in frequency response

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Organic devices & potential mapping 3D simulations and experiments

TU / e. Organic devices & potential mapping 3D simulations and experiments. Dimitri Charrier , M. Kemerink and R.A.J. Janssen. Agenda. Scanning Kelvin Probe Microscope - why & basics SKPM - Problems Parameter free modeling Conclusions. Introduction. = I, ?, E, V. = organic device. tip.

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SURFACE POTENTIAL

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Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices. Brett Goldsmith Collins Lab Department of Physics and Astronomy. A broad look at defects. Tools to Study CNT Defects. Fan, Nature Materials. December, 2005. Drain. Source. V SD. V F. V tip.

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Signatures of Chemical Defects in Carbon Nanotube Electronic Devices

Signatures of Chemical Defects in Carbon Nanotube Electronic Devices. Brett Goldsmith Collins Lab Department of Physics and Astronomy. A broad look at defects. Tools to Study CNT Defects. Fan, Nature Materials. December, 2005. Drain. Source. V SD. V F. V tip.

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Lecture 16

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Acceleration Noise in LISA

Surface Potential Measurements with the LISA Kelvin Probe Jordan Camp LIGO/LISA Charging Workshop July 26, 2007 G070573-00-R. Acceleration Noise in LISA. LISA measurement sensitivity is 10 -12 m over 1000 sec A force of 10 -16 N will produce this displacement in 1000 sec!

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Electron transfer in heterogeneous systems

Electron transfer in heterogeneous systems. 29.3 The electrode-solution interface (Electrical double layer) Helmholtz layer model ?. Gouy-Chapman Model. This model explains why measurements of the dynamics of electrode processes are almost done using a large excess of supporting electrolyte.

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Electronic characterization of dislocations

Surf. Potential. Electronic characterization of dislocations. 0.1 V /Div. 10 nm /Div. Morphology. Potential. G. Koley and M. G. Spencer, Appl. Phys. Lett. 78 , 2873 (2001). UV light. Surface potential patterning using mask. 20 ?m circle quartz mask. HFET Sample

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Electrical Properties of Membranes

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Height

Surface Reactivity of Nanostructured Light Weight Metals Henry J. Rack, Clemson University, DMR 0836068.

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Effect of VUV and UV Irradiation on low- k Dielectrics

Effect of VUV and UV Irradiation on low- k Dielectrics. H. Sinha a , J.L. Lauer a , M.T. Nichols a , G.A. Antonelli b , Y. Nishi c and J.L. Shohet a a University of Wisconsin-Madison, Madison, WI 53706 b Novellus Systems, Tualatin, OR 97062 c Stanford University, Stanford, CA 94305.

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