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Advanced Stripe Pattern Techniques in Semiconductor Laser Laboratories

This research focuses on single and dual stripe patterns used in semiconductor laser laboratories in Illinois. We investigate the characteristics of single open stripes with widths ranging from 25 to 150 µm and dual stripes with widths of 2 to 25 µm and separations of 2 to 5 µm. The studies encompass the unique properties created by these stripe dimensions, particularly in terms of their small sizes relative to diffraction lengths, which are crucial for enhancing laser performance and efficiency in semiconductor applications.

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Advanced Stripe Pattern Techniques in Semiconductor Laser Laboratories

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  1. Single Stripe Pattern Semiconductor Laser Laboratory • SiO SiO2 field • single open stripe • stripe width 25-150 µm ILLINOIS

  2. Dual Stripe Pattern Semiconductor Laser Laboratory • open field • dual stripe • stripe separation 2-5 µm • stripe width 2-25 µm • dimensions small with respect to a dif fusion length ILLINOIS

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