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Increasing the Power of Solid-State RF Amplifiers

Increasing the Power of Solid-State RF Amplifiers. Dr. Gabriele Formicone Director of Technology and Innovation. www.integratech.com. Solid State PAs (SSPAs) are overtaking TWTA and Klystron Amplifiers in Mega Watt applications. TWTA. SSPA. Power (Watts). Frequency (GHz). Agenda.

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Increasing the Power of Solid-State RF Amplifiers

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  1. Increasing the Power of Solid-State RF Amplifiers Dr. Gabriele Formicone Director of Technology and Innovation www.integratech.com

  2. Solid State PAs (SSPAs) are overtaking TWTA and Klystron Amplifiers in Mega Watt applications TWTA SSPA Power (Watts) Frequency (GHz)

  3. Agenda Drivers for high power Solid-State RF technology High power Solid-State RF technology comparisons 50V GaN/SiC discrete devices and pallets High Voltage GaN/SiC for 100 to 150 V operation

  4. Drivers for high power Solid State RF technology • Replacement of TWTA and Klystron amplifiers in high power satellites, radars and particle accelerators • New applications or functionality such as broader bandwidth, multi-band and dual-use radars, etc. • Simpler and less costly to manufacture, maintain and repair • More reliable and robust especially in harsher environments

  5. Best proven high power SS RF technology – GaN/SiC

  6. A few words about Integra Technologies, Inc. 20+ YEARSLong Heritage >1,000 PARTSBroad Catalog Pallets Packaged Transistors Die & Wafers

  7. Extending GaN/SiC Performance: UHF Radar

  8. High voltage RF GaN/SiC for 100 to 150 V • Integra has been a pioneer in high voltage GaN/SiC for RF applications • Advantages of high voltage process • Higher impedance, easier to broadband match for wideband apps • Higher power density (10W/mm for 100V and 20W/mm for 150V) • Smaller die, less parassitics, lower current for same power • Combined with Integra’s Patented Thermally Enhanced GaN technology offers a production ready alternative to GaN on Diamond Proprietary Information

  9. Beware of DC-DC GaN Technology 9 • 200V & 600V breakdown e-mode AlGaN/GaN HEMT typically used in DC-DC converters at kHz frequency • Design goal is to minimize RDSON (resistive losses) during on-state; switching losses negligible at kHz frequency • Transistor is “usually” oversized to achieve ultra-low RDSON • > 80% efficiency is achieved at kHz (Si MOS & GaN HEMT) and a few MHz (GaN only)

  10. Benefits of High Voltage higher impedance at higher VDD higher power density at higher VDD

  11. Integra high voltage GaN high power cell capability • Higher voltage enables larger transistor unit cells with several kW power level • Reduces the # of pallets in a high power system; fewer combiners, less complexity, better reliability • Improves overall system efficiency • Enables broader band matching through higher impedance PRF [kW] VDD [V] constant RL = 1 W and VK =10% of VDD

  12. Integra high voltage GaN at constant load • At constant 1-ohm load impedance, RF power increases with a square law

  13. Integra high voltage GaN at constant power • At constant PRF = 1-kW, output impedance moves closer to 50 W

  14. Integra high voltage GaN at constant current • At constant current / gate periphery, output impedance moves closer to 50 W • and RF power increase linearly

  15. CW load line for reliability analysis • No gate – drain lag due to traps is observed! • As VDD increases, PRF and PDISS increase hence TJ increases and IDSMAX drops! Load line analysis proves high voltage GaN/SiC can be reliable, too! G. Formicone, J. Burger, J. Custer, W. Veitschegger, G. Bosi, A. Raffo and G. Vannini , A GaN Power Amplifier for 100 VDC Bus in GPS L-band, IEEE & MTT-S PAWR, Phoenix, AZ, 2017.

  16. 550W GaN/SiC at 100V, 325 MHz – CW GaN die width ~6.5 mm Measured Data Thermally Enhanced GaN transistor 77% Resistor arrays Gain [dB] 19dB Efficiency [%] Pout [W]

  17. 1.1kW GaN/SiC at 145V, 325 MHz – Pulsed Pulse 100 s, Duty cycle 10 % 100V 125V 145V • 1.1kW single die • 22 Watts/mm • 80% Efficiency Gain [dB] Efficiency [%] Pout [W]

  18. 1.0kW GaN/SiC at 145V, 650 MHz – Pulsed Pulse 100s, Duty cycle 10 % • 1.0kW single die • 20 Watts/mm • 75% Efficiency 145V Gain [dB] 125V Efficiency [%] 100V Pout [W]

  19. 1.2kW GaN/SiC at 100V, 400 MHz – ~CW Pulse = 100us • 2 die assembly • 12 Watts/mm • 80% Efficiency Gain [dB] Pulse = 10ms Efficiency [%] 100V for high impedance at 2ndharmonic to optimize for efficiency Up to 2kW CW in single packagewith 4 die assembly Pout [W]

  20. 1kW GaN/SiC at 150V, 450 MHz – Pulsed 600 V GaN HEMT design for ground penetrating SAR transmitters - UHF Pulse 100 s, Duty cycle 10 % • 1um design • 45mm die • >20 Watts/mm • >75% Efficiency Gain [dB] Efficiency [%] Potential for 5 to 10 kW single ended GaN transistors at UHF with larger dies and package Pout [W] G. Formicone, J. Burger and J. Custer, “150 V-Bias RF GaN for 1 kW UHF Radar Amplifiers” CSICS, 2016

  21. 100W GaN/SiC at 100V, L-Band – CW L1, L2, L5 band sweep from 1.175 to 1.625GHz • 0.5um design • 12mm die • 10 Watts/mm Gain [dB] Efficiency [%] 1 PA for all satellite GPS bands in L-band Pout [W] G. Formicone, J. Burger, J. Custer, W. Veitschegger, G. Bosi, A. Raffo and G. VanniniA GaN Power Amplifier for 100 VDC Bus in GPS L-band, IEEE & MTT-S PAWR, Phoenix, AZ, 2017.

  22. 300W GaN/SiC at 150V, 1.5GHz – Pulsed Pulse 100ms, Duty cycle 10% 75V 50V 100V 150V 125V Gain [dB] • 15mm die • 60% Efficiency • 20 Watts/mm Efficiency [%] Pout [W] G. Formicone, J. Custer, and J. Burger, “First Demonstration of a GaN-SiC RF Technology Operating Above 100 V in S-band“ CS-MANTECH-2017, Indian Wells, CA

  23. 150W GaN/SiC at 90V, X-Band 7.9GHz • 0.25um FET • 15 Watts/mm • 50% Efficiency 100V 90V 90V 100V Field Plate Gain [dB] Gate Drain Source Efficiency [%] Pout [W] G. Formicone, “A 15 W/mm GaN Technology for C-band Pulsed Radars with 45% PAE“ CS-MANTECH-2018, Austin, TX

  24. 80W GaN/SiC at 75V, X-Band 7.9GHz – Pulsed Pulse 35us, 30% duty cycle Gain [dB] • 80W, 9.6mm die • 7.9GHz, 20MHz BW • >40% PAE PAE [%] Pout [W] G. Formicone, “A 15 W/mm GaN Technology for C-band Pulsed Radars with 45% PAE“ CS-MANTECH-2018, Austin, TX

  25. Conclusions • Integra is pioneering a game changer technology with HV GaN/SiC SSPA’s as a next gen technology to TWT • Integra’s HV GaN/SiC SSPA’s can reduce complexity and dramatically increase overall system reliability • Integra has demonstrated performance and is ready to lead this technology dislocation

  26. Any Questions? Dr. Gabriele Formicone Director of Technology and Innovation gformicone@integratech.com www.integratech.com

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