Bump-bonding : offers

1. Bump-bonding: offers • Technicalspecification doc hasbeenprepared: Ferdinand, myself, with the help of Alex, Petra and Massimiliano • Ithasbeencheckedby the Laszlo Abel and Dante Gregorio ofContracts and IT Supplies Section (FP-PI-CO) • Tender formhasbeenpreparedbyLaszlo Abel • Ithasbeen sent to IZM and VTT F. Marchetto INFN-Torino Both, IZM and VTT, repliedwithanoffer June, 3rd 2013

2. IZM

3. From the doc: Technicalspecification • 3.2 Requirements for the Assembly Process • These requirements are common to both assembly types, single-chip and full-detector: • Bump bonding of silicon sensors to front-end chips with a pixel size of 300 µm x 300 µm and a bump • pad of octagonal shape of 10 µm apothem (opening in the passivation). • The arrangement of the bump pads should follow the scheme presented in Figure 7 and 8. • The standoff height between chip and sensor after bump connection should be approximately 10-15 µm. • The handling and processing of the sensors should ensure that the leakage current characteristics allow • a high voltage operation, without current breakdown and a total leakage current of less than approximately • 8 nA/cm2 at 20 °C and at the operating voltage of 700 V. • The planarity of the external chip surface over the area corresponding to the sensor should deviate • from flatness by less than 30µm. • The wire bonding pads on the short edge of the read-out chips have to be fully accessible and • wire-bondable after assembly and delivery. • In order to comply with the physics requirements the yield of working pixels per final GTK assembly • should exceed 99%. • When polarized with the operating voltage (700 V) the assembly should withstand the voltage without • discharge or breakdown.

4. From the doc: Technicalspecification • 4.4.2 Production-series • The validation of the production items includes the following assessments, which are derived from the technical specification in section 3.2 • a) the X-ray pictures showing the quality of the bonds; • b) planarity measurements of the external chip surface over the area corresponding to the sensor, or in other terms the area where the bump-bonds are, showing a deviation from flatness smaller than 30µm; • c) no discharges and breakdowns after 24 hours under with the full bias voltage (700 V) between sensor and chips and the leakage current remains within the requirements (8 nA/cm2 at 20 °C); • d) at least 100 temperature cycles in a climatic chamber swinging from 70 °C to -20 °C with a temperature gradient in the range of 3-5 °C /min to prove that the assemblies keep the required planarity and bump-bonds continuity; • e) thickness verification (100µm) of the front-end chip with a Scanning Electron Microscope; • f) wire bond pads clean and undamaged.

6. VTT

7. 5. PAYMENT CONDITIONS 5.1 The payment of any invoice by CERN shall be subject to the provision by the contractor of a bank guarantee for the performance of his obligations under the contract. The bank guarantee, in favour of CERN, shall be issued by a bank approved by CERN[1], for an amount corresponding to 10% (ten per cent) of the total amount of the contract and valid until expiry of the warranty of the last batch of the supply delivered. The bank guarantee shall be established using the template provided as Annex 1 of the General Conditions of CERN Contracts. 5.2 The total amount of the contract shall be paid by CERN thirty days following acceptance of the supply and receipt of a correct invoice and receipt of the bank guarantee stipulated here above. [1] Rating of BBB+ at least or equivalent,with proof of rating.