2004 Update to Lithography Chapter of the ITRS

1. 2004 Update to Lithography Chapter of the ITRS Masaomi Kameyama Chairman of the Japan Lithography Technical Working Group

2. Changes to Litho Tables for 2004 • CD control (total CD control) • US and Japan TWG studies concluded that <4nm 3s CD control has no known solutions • CD control will remain red for the present and future nodes • Definition of potential solutions • More specific criteria for N to N+2 nodes • N+3 node and beyond may be more broad ranging and inclusive • Changes to coloring, footnotes, etc. • Definition of overlay in Tables 77a and 77b • Mask table values updated • Resist table values updated • More discussion needed (2005 update probable) • LWR/LER definitions and values with input from PIDS, FEP and Metrology • APC requirements

3. New criteria for potential solutions • All infrastructure (masks, tools, resist,…) needs to be in place to meet the ramp for the specified node • Technology must be planned to be used by IC makers in at least two geographical regions • For nodes with black coloring, the requirement to have more than one region support is not applicable • Technology should be targeting leading edge critical layer needs • Consideration (not a requirement): 100 tools worldwide over the life of that tool generation

4. 2004 2004 2004 2007 2007 2007 2010 2010 2010 2013 2013 2013 2016 2016 2016 2019 2019 2019 2003 2003 2003 2005 2005 2005 2006 2006 2006 2008 2008 2008 2009 2009 2009 2011 2011 2011 2012 2012 2012 2014 2014 2014 2015 2015 2015 2017 2017 2017 2018 2018 2018 Technology Node Technology Node hp90 hp90 hp90 hp90 hp65 hp65 hp65 hp65 hp45 hp45 hp45 hp45 hp32 hp32 hp32 hp32 hp22 hp22 hp22 hp22 hp16 hp16 hp16 hp16 90 90 90 90 193 nm + RET 193 nm + RET 193 nm + RET 193 nm + RET 193 nm + RET + litho 193 nm + RET + litho 193 nm + RET + litho 193 nm + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs Narrow Narrow Narrow Narrow 65 65 65 65 193 nm immersion lithography 193 nm immersion lithography 193 nm immersion lithography 193 nm immersion lithography options options options options EPL, PEL EPL, PEL EPL, PEL EPL, PEL DRAM Half - pitch (dense lines) 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho - - - - - friendly designs friendly designs friendly designs friendly designs friendly designs Pitch, nm) Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho - - - - - friendly designs friendly designs friendly designs friendly designs friendly designs Narrow Narrow Narrow Narrow Narrow 45 45 45 45 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 options options options options options PEL PEL PEL PEL PEL - Technology Options at Technology Nodes (DRAM Half EUV EUV EUV EUV Narrow Narrow Narrow Narrow 157 nm immersion + RET + litho 157 nm immersion + RET + litho 157 nm immersion + RET + litho 157 nm immersion + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs 32 32 32 32 options options options options EPL, imprint lithography EPL, imprint lithography EPL, imprint lithography EPL, imprint lithography ML2 ML2 ML2 ML2 EUV, EPL EUV, EPL EUV, EPL EUV, EPL Narrow Narrow Narrow Narrow 22 22 22 22 ML2, imprint lithography ML2, imprint lithography ML2, imprint lithography ML2, imprint lithography options options options options Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Narrow Narrow Narrow Narrow 16 16 16 16 ML2, EUV + RET ML2, EUV + RET ML2, EUV + RET ML2, EUV + RET options options options options Research Required Research Required Research Required Research Required Development Underway Development Underway Development Underway Development Underway Qualification/Pre Qualification/Pre Qualification/Pre Qualification/Pre - - - - Production Production Production Production Continuous Improvement Continuous Improvement Continuous Improvement Continuous Improvement This legend indicates the time during which research, developmen This legend indicates the time during which research, developmen t, and qualification/pre t, and qualification/pre - - production should be taking place for the solution. production should be taking place for the solution. 2003 ITRS potential solutions 2003 2003 2005 2005 2006 2006 2008 2008 2009 2009 2011 2011 2012 2012 2014 2014 2015 2015 2017 2017 2018 2018 Technology Node hp90 hp65 hp45 hp32 hp22 hp16 RET = Resolution enhancement technology LFD = Lithography friendly design rules 193 nm + RET 193 nm + RET 193 nm + RET + LFD 157 nm + RET + LFD 193 nm immersion EPL, PEL DRAM Half DRAM Half DRAM Half Pitch (dense lines) - - - pitch pitch (dense lines) (dense lines) 157 nm + RET + LFD 193 nm immersion + RET + LFD EUV, EPL, PEL, ML2 Narrow Narrow options options DRAM Half Pitch (nm) EUV 157 nm immersion + RET + LFD EPL, imprint ML2 Narrow Narrow friendly designs options options ML2 EUV, EPL ML2, imprint Innovative technology EUV, EPL Narrow Narrow ML2, imprint lithography options options Innovative technology Innovative technology ML2, EUV + RET Innovative technology Narrow Narrow ML2, EUV + RET options options Research Required Research Required Development Underway Development Underway Qualification/Pre Qualification/Pre - - Production Production Continuous Improvement Continuous Improvement Unofficial version of 2003 table; Not for publication

5. 2004 2004 2004 2007 2007 2007 2010 2010 2010 2013 2013 2013 2016 2016 2016 2019 2019 2019 2003 2003 2003 2005 2005 2005 2006 2006 2006 2008 2008 2008 2009 2009 2009 2011 2011 2011 2012 2012 2012 2014 2014 2014 2015 2015 2015 2017 2017 2017 2018 2018 2018 Technology Node Technology Node hp90 hp90 hp90 hp90 hp65 hp65 hp65 hp65 hp45 hp45 hp45 hp45 hp32 hp32 hp32 hp32 hp22 hp22 hp22 hp22 hp16 hp16 hp16 hp16 90 90 90 90 193 nm + RET 193 nm + RET 193 nm + RET 193 nm + RET 193 nm + RET + litho 193 nm + RET + litho 193 nm + RET + litho 193 nm + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs Narrow Narrow Narrow Narrow 65 65 65 65 193 nm immersion lithography 193 nm immersion lithography 193 nm immersion lithography 193 nm immersion lithography options options options options EPL, PEL EPL, PEL EPL, PEL EPL, PEL DRAM Half - pitch (dense lines) 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho 157 nm + RET + litho - - - - - friendly designs friendly designs friendly designs friendly designs friendly designs Pitch, nm) Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho Immersion 193 nm lithography + RET + litho - - - - - friendly designs friendly designs friendly designs friendly designs friendly designs Narrow Narrow Narrow Narrow Narrow 45 45 45 45 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 EPL, PEL, ML2 options options options options options PEL PEL PEL PEL PEL - Technology Options at Technology Nodes (DRAM Half EUV EUV EUV EUV Narrow Narrow Narrow Narrow 157 nm immersion + RET + litho 157 nm immersion + RET + litho 157 nm immersion + RET + litho 157 nm immersion + RET + litho - - - - friendly designs friendly designs friendly designs friendly designs 32 32 32 32 options options options options EPL, imprint lithography EPL, imprint lithography EPL, imprint lithography EPL, imprint lithography ML2 ML2 ML2 ML2 EUV, EPL EUV, EPL EUV, EPL EUV, EPL Narrow Narrow Narrow Narrow 22 22 22 22 ML2, imprint lithography ML2, imprint lithography ML2, imprint lithography ML2, imprint lithography options options options options Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Innovative technology Narrow Narrow Narrow Narrow 16 16 16 16 ML2, EUV + RET ML2, EUV + RET ML2, EUV + RET ML2, EUV + RET options options options options Research Required Research Required Research Required Research Required Development Underway Development Underway Development Underway Development Underway Qualification/Pre Qualification/Pre Qualification/Pre Qualification/Pre - - - - Production Production Production Production Continuous Improvement Continuous Improvement Continuous Improvement Continuous Improvement This legend indicates the time during which research, developmen This legend indicates the time during which research, developmen t, and qualification/pre t, and qualification/pre - - production should be taking place for the solution. production should be taking place for the solution. Proposed 2004 Potential Solutions 2003 2003 2005 2005 2006 2006 2008 2008 2009 2009 2011 2011 2012 2012 2014 2014 2015 2015 2017 2017 2018 2018 Technology Node hp90 hp65 hp45 hp32 hp22 hp16 Red: consensus Italics: Discussion in progress, but not yet a consensus potential solution 193 nm 193 nm + RET 193 nm+LFD 193 nm immersion EPL, PEL DRAM Half DRAM Half DRAM Half Pitch (dense lines) - - - pitch pitch (dense lines) (dense lines) 193 nm immersion+LFD, EUV Optical ML2 157nm immersion, EPL, PEL Narrow Narrow options options DRAM Half Pitch (nm) EUV , EPL 193 nm immersion 157nm immersion ML2 , imprint Narrow Narrow friendly designs options options ML2 EUV, EPL Innovative optical immersion ML2, Imprint, innovative technology Not yet prioritized EUV, EPL Narrow Narrow ML2, imprint lithography options options Innovative technology Innovative technology EUV+RET, imprint, ML2 Innovative technology Narrow Narrow ML2, EUV + RET options options Research Required Research Required Development Underway Development Underway Qualification/Pre Qualification/Pre - - Production Production Continuous Improvement Continuous Improvement Unofficial version of 2004 table; Not for publication

6. Difficult Challenges - Short Term (1)

7. Difficult Challenges - Short Term (2)

8. Difficult Challenges - Long Term (1)

9. Difficult Challenges - Long Term (2)

10. Summary of 2004 Lithography Chapter Updates • Defined new criteria for evaluating near-term potential solutions • Stronger emphasis on difficult challenges related to immersion lithography • Continued emphasis on challenges for implementing cost-effective post-optical lithography solutions

11. Backup

12. Lithography ITWG Chairmen and Co-chairmen for 2004