dora
Uploaded by
12 SLIDES
281 VUES
130LIKES

Exploring Structure-Function Relationships in Organic Field Effect Transistors

DESCRIPTION

This research discusses the structure-function relationships in organic field effect transistors (OFETs) and highlights the advantages of organic semiconductors over inorganic alternatives. Organic semiconductors enable easier manufacturing, low-temperature processing, solution processing, and cost-effective production on flexible substrates. Experimental results demonstrate that OFETs with a specific molecular structure (62.5% Cl-TesADT and 37.5% TesADT) achieve higher hole mobility due to optimal grain connectivity formed at the eutectic point. Future studies may investigate other TesADT derivatives.

1 / 12

Télécharger la présentation

Exploring Structure-Function Relationships in Organic Field Effect Transistors

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group

  2. Why Organic Semiconductors? What are Organic Semiconductors? What advantages do they offer? • An alternative to inorganic electronics: • Easier manufacturing • Low temperature processing • Solution processing • Lower costs • Flexible substrates Image:shttp://www.konarka.com/index.php/power-plastic/about-power-plastic/ http://www.physorg.com/news/2011-02-carbon-nanotube-transistors-inexpensive-flexible.html

  3. How it works-Physical Gold Contacts Active Layer Silicon Oxide Silicon

  4. Devices TesADT • Processing Steps: • Weigh out compounds • Dissolve in solution • Clean SiO2 wafer • Spincast/dropcast onto substrate • Evaporate gold contacts Cl-TesADT

  5. Device Results

  6. AFM 50 mol% 100 mol% 62.5 mol% 0 mol%

  7. DSC

  8. Eutectic Grain Boundaries

  9. Conclusion • At 62.5% ClTesADT and 37.5%TesADT, a eutectic point forms • This eutectic point has the highest intermixing and therefore the greatest grain connectivity • As a result, OFETs with this molecular structure have higher hole mobility and function better • Future work could involve other TesADT derivatives

  10. Acknowledgements • Professor Loo • Stephanie Lee • Loo Lab Group • Princeton Environmental Institute

  11. GIXD 37.5mol% 50mol% 12.5mol% 87.5mol% 100mol% 62.5mol%

More Related