1 / 2

Drain source current (I ds ) vs voltage( V ds ) as a function of gate voltage (V g )

Single Source Precursors For Producing Compound Semiconductors: ZnO. Joshua B. Halpern, Howard University, DMR 0611595.

ellis
Télécharger la présentation

Drain source current (I ds ) vs voltage( V ds ) as a function of gate voltage (V g )

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Single Source Precursors For Producing Compound Semiconductors: ZnO Joshua B. Halpern, Howard University, DMR 0611595 It is attractive to consider a single organic precursor that could be used to grow compound inorganic semiconductors such as ZnO. A basic problem associated with organometallic precursors is incorporation of carbon as well as premature precursor decomposition. To address these issues the Matthews’ group studies the versatile bketoiminates. CVD Drain source current (Ids) vs voltage(Vds ) as a function of gate voltage (Vg) bis(4-N-n-butylamino-2-pentanonato) zinc Single source precursors can be designed to decompose homogeneously on growth surface and at lower temperatures and can minimize safety issues associated with toxic and pyrophoric precursors commonly used in the semiconductor industry today. This work demonstrates a new set of single source precursors for growth of ZnO. ZnO is an increasingly important semiconductor used in light emitting diodes and optical sensors. The Howard group has synthesized a number of single source precursors from which films have been grown using Atmospheric Pressure Metal Organic Chemical Vapor Deposition. The Katz group at Johns Hopkins has fabricated transistor structures on these films and tested them. Transistors fabricated using the films as the semiconductor. Unannealed films with significant carbon content (75 atomic % on the surface) showed weak ohmic conductance of 1-10 nanosiemens/cm2 . After annealing, the carbon content was reduced to less than 1% of its original value, and the remaining film was a semiconductor showing saturation in the gate voltage dependent output curves and electron mobility of ~0.001 cm2 /Vs.

  2. Joshua B. Halpern, Howard University, DMR 0611595 Single Source Precursors For Producing Compound Semiconductors: ZnO A group lead by Jason Matthews of Howard University and Howard Katz of the Johns Hopkins University have demonstrated single source precursors for the growth of ZnO thin films. They have developed an annealing technique that removes carbon contamination of the deposited films and fabricated transistors that show saturation in the gate voltage dependent output curves and electron mobility of ~0.001 cm2 /Vs. See “Metal Organic Chemical Vapor Deposition (MOCVD) of ZnO from beta-ketoiminates”, J. Holmes, K. Johnson, B. Zhang, H.E. Katz, and J.S. Matthews. Applied Organometallic Chemistry, 26, 267-272, (2012). For more information contact: Prof. Jason Matthews, jsmatthews@howard.eduDepartment of Chemistry Howard UniversityWashington, DC 20050

More Related