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Experiment

Experiment. Surface sol-gel: HfO2 deposition. Region that is deposited with thick particles. Experiment. Ellipsometry. n thickness. As- dep 1.55 11.4nm 500C annealed 1.60 13.3nm Thick region 1.40 62.9nm. Leakage current. Breakdown voltage. 500C annealed 5MV/cm

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Experiment

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  1. Experiment Surface sol-gel: HfO2 deposition Region that is deposited with thick particles

  2. Experiment Ellipsometry n thickness As-dep 1.55 11.4nm 500C annealed 1.60 13.3nm Thick region 1.40 62.9nm Leakage current Breakdown voltage 500C annealed 5MV/cm 750C annealed 15MV/cm

  3. Experiment Ellipsometry C ~ 0.03pF Poor dielectric property in all conditions: 500C, 750C annealing UVO treatment, H2O2 treatment

  4. Experiment Future work Thickness measurement of 20-30 cycles sample (Deposition confirmation) Longer annealing time QCM measurement Better deposition: Rinsing: prevent drying precursor solution Drying: minimize residual water

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