1 / 14

IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130

IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130. FO-4 Delay. Inverter Chain. NAND Chain. E min Comparison. V min - IBM65: 0.43V TSMC65: 0.41V ST65: 0.41V IBM90: 0.39V UMC130: 0.36V

kolya
Télécharger la présentation

IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130

  2. FO-4 Delay Inverter Chain NAND Chain

  3. Emin Comparison Vmin - IBM65: 0.43VTSMC65: 0.41VST65: 0.41VIBM90: 0.39V UMC130: 0.36V Delay(@ Emin) -IBM65: 0.490nsTSMC65: 0.28nsST65: 0.2nsIBM90: 3.09ns UMC130: 1.76ns

  4. gm vs. Id

  5. Energy and Delay Capacitances

  6. Current Density • IBM 90 : ~ 24 % Variation • IBM 65 : ~ 19-24 % Variation • TSMC 65 : ~ 22-28 % Variation • ST65 : ~ 16-20% Variation TT FF SS

  7. Ion/Ioff at the TT Corner NFET PFET

  8. Vth vs. Length TSMC65 ~ 17% Variation IBM65 ~ 23% Variation ST65 ~ 15% Variation

  9. Ron Values NFET PFET

  10. gm vs. Vgs IBM : 7% Variation TSMC : 3-8% Variation ST : 7% Variation

  11. gmro vs. Vgs at TT • W/L ratio maintained constant over the two technologies IBM65 TSMC65

  12. gmro vs. Vgs at FF IBM65 TSMC65

  13. gmro vs. Vgs at SS IBM65 ~ 20% Variation TSMC65 ~ 25% Variation

  14. Gate Leakage vs. Vds

More Related