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Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA

Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA. Jin-Won Chung, Churl-Seung Lee, Dae Hong Ko * , Jun-Hee Hahn ** and Kwang-Ryeol Lee Future Technology Research Division, Korea Institute of Science and Technology

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Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA

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  1. Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA Jin-Won Chung, Churl-Seung Lee, Dae Hong Ko*, Jun-Hee Hahn** and Kwang-Ryeol Lee Future Technology Research Division, Korea Institute of Science and Technology * Department of Ceramics, Yonsei University ** Korea Research Institute of Standard Science

  2. Applications of DLC Film

  3. High Residual Compressive Stress of DLC Films DLC Coating • Causes the Instability of the Coating • Affects the Physical Properties in Some Cases

  4. Self Delamination of DLC Films • K.-R. Lee et al., Diam. Rel. Mater. 2 (1993) 208. • M.-W. Moon et al., Acta Mater., 50 (2002) 1219.

  5. Key Idea of the Method For Isotropic Thin Films

  6. Measurement of Residual Stress • Assumption • 1-D Treatment of Elastic Equilibrium • Sufficient Adhesion • df << ds • ds << R ds df R

  7. Measurement of Curvature

  8. Key Idea of the Method For Isotropic Thin Films

  9. Preparation of DLC Bridge by Micro Fabrication SiO2 Isotropic Wet Etching Wet Cleaning DLC film Deposition ( on SiO2 ) Strain Estimation DLC Patterning

  10. Microstructure of DLC Bridges 150mm C6H6, 10mTorr, -400V, 0.5mm

  11. Strain of the Buckled Thin Films (I) z x 2A0

  12. Stain of the Buckled Thin Films (II)

  13. Preparation of Free-overhang by Anisotropic Substrate Etching Si Etching (by KOH Solution) Wet Cleaning DLC film Deposition Cleavage along [011] Direction Strain Measurement

  14. Elastic Modulus for Various Ion Energies Nanoindentation t>1.0 ㎛

  15. Advantages of This Method • Simple • Completely Exclude the Substrate Effect • Can Be Used for Very Thin Films • The possibility of elastic modulus measurement in very thin film

  16. a-C:H, C6H6 -400V ta-C (-50Vb) Elastic Modulus of Very Thin Films J.-W. Chung et al, Diam.Rel. Mater. 10 (2001) 2069.

  17. RF PACVD (13.56MHz) Precursor : CH4 Vb/ P1/2 : 20 ~ 233 Vb/mTorr1/2 Substrate : P type (100) Si Film Thickness : ~ 50nm Synthesis of DLC Film by r.f.-PACVD

  18. Residual Stress & G-peak Position of Raman Spectra

  19. Biaxial Elastic Modulus 20

  20. Biaxial Elastic Modulus 100 20

  21. Biaxial Elastic Modulus 100 166 20

  22. Biaxial Elastic Modulus 100 166 233 20

  23. G-peak Position of Raman Spectra 100 233 166 166 100 233 20 20

  24. Si Substrate 233 166 100 20 Si Substrate Schematic Film Structure Si Substrate

  25. Synthesis of ta-C Films • ta-C films on Si (100) Wafer • Vb : from 0 to –500V

  26. Elastic Modulus of ta-C film

  27. Elastic Modulus of ta-C film

  28. Raman Spectra

  29. Summary • Presently suggested method for the elastic modulus measurement enabled us to compare the mechanical properites and thus the atomic bond structures of very thin amorphous carbon films. • ta-C films showed insignificant structural evolution during the initial period of deposition. • a-C:H showed the significant structural evolution in both polymeric and graphitic film deposition condition. • a-C:H film deposited in optimum ion energy condition didn’t show the structural evolution.

  30. Applications of DLC Film

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