1 / 9

Results

paytah
Télécharger la présentation

Results

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. About 410 presentations (63 Invited Presentations, 30 EC Projects Presentations, 80 Oral Presentations, and 230 Poster Presentations) from 47 countries gave an overview of the latest advances in the emerging fields of Nanosciences and Nanotechnologies and in particular the Plasmonics-Nanoelectronics & Clean Energy, Nanomedicine and Nanomaterials, Nanofabrication, Nanoengineering and Nanoconstruction.

  2. Results Results • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • Conclusions • Conclusions • Fig. 4 Surface potential images of Ti/TiOx/Ti (left) and Nb/NbOx/Nb (right) memristive devices before applying bias voltage (a,d) and after removing bias voltage of +3V (b,e in 2D and c,f in 3D representation). Scan direction was from bottom to top.

  3. Results Results • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • Conclusions • Conclusions • Fig. 4 Surface potential images of Ti/TiOx/Ti (left) and Nb/NbOx/Nb (right) memristive devices before applying bias voltage (a,d) and after removing bias voltage of +3V (b,e in 2D and c,f in 3D representation). Scan direction was from bottom to top.

  4. Results Results • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Ability of KPFM to detect work-function changes in metals or doping-level changes in semiconductors can be successfully adapted to • detection of local changes in chemical composition of investigated surfaces, e.g. due totip-inducedoxidation (Fig. 3) • studies of distribution of charge carriers in fabricated devices (Fig. 4) • KPFM enables to observe result of LAO even in situations, where the grown oxide is not visible in the topography (Fig. 3). • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • Fig. 3 Topography (a) and surface potential (b) image of the logo of Institute of Experimental Physics of the Slovak Academy of Sciences made by LAO on Co-Cr thin film. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • KPFM enables to study processes in oxide barrier of metal-insulator-metal (MIM) type of devices, e.g. vacancy drift and diffusion due to applied bias in memristive structures (Fig. 4). • Illustrativecomparisonof time evolution of the KPFM image for Ti/TiOx/Ti and Nb/NbOx/Nb memristive devices (Fig. 4) provides direct information about dynamics of oxygen-vacancy diffusion, indicating significantly faster diffusion in Nb/NbOx/Nb structures in comparison with Ti/TiOx/Ti ones. • Conclusions • Conclusions • Fig. 4 Surface potential images of Ti/TiOx/Ti (left) and Nb/NbOx/Nb (right) memristive devices before applying bias voltage (a,d) and after removing bias voltage of +3V (b,e in 2D and c,f in 3D representation). Scan direction was from bottom to top.

  5. Organic Semiconductor materials (small molecules & polymers) • Organic/inorganic and hybrid materials and systems • Self-organized molecules and systems • Morphology & Interfaces characterization and control • Device Properties and Charge transport • Theory, Design, Modelling, Simulations & Computational Methods • Synthesis of new materials and methods (chemical, physical) • Thin film fabrication by lab- and large area processes (Printing, Vacuum Deposition, Patterning) • Roll-to-roll and in-line Quality control processes • Organic Photovoltaics (Process, Manufacturing, Device lifetime/reliability, Applications, Strategy) • Transparent Electrodes (organic, printable, inorganic, oxides), non-transparent electrodes & dielectric materials • Flexible substrates & encapsulation methods & materials • OLED Displays & Lighting • Sensors & Smart Textiles

  6. The ISSON Summer Schools, including the attendance in the NN Conference, reviewed the current state of knowledge in the emerging fields of N&N for the training of the next-generation researchers and scientists. Plenarysession: • School 1.N&NPrinciples, Nanomaterials, Nanoscale Characterization, and Applications Parallelsessions: • School 2. Organic ElectronicsMaterials, Devices, Manufacturing, and Applications • School 3.NanoMedicineNanobiotechnology, Nanomedicine, Methods, and Applications

  7. Welcome to NANOTEXNOLOGY 2012 THANK YOU FOR YOUR ATTENTION !

More Related