Gen10.59, 25V and 30V MOSFETs for DC-DC Applications

1. PRESS RELEASE Gen10.59, 25V and 30V MOSFETs for DC-DC Applications SINGLE DIE DATA SHEETS This new family of N-Channel MOSFETs utilizes the proven Gen 10.59, IR’s latest silicon technology. The new 25V and 30V devices are being offered in a variety of packages including DPAK, SO-8 as well as the compact PQFN 5x6 and PQFN 3x3. Compared to the previous generation (Gen 10.55), the new devices feature benchmark RDS(on) performance and are aggressively priced. DUAL DIE DATA SHEETS HI-RES GRAPHIC MOSFET HOME PAGE • Features • 25V and 30V MOSFETs • Available in SO-8, PQFN 5x6, PQFN 3x3 and D-PAK • 20V Vgs maximum gate rating • Excellent Figure-Of-Merit at Vgs = 10V • Very good Figure-Of-Merit at Vgs = 4.5V • RDS(on) as low as 2.7mΩ • Dual SO-8 offers price reduction Vs 2 single SO-8, if RDS(on) > 15mΩ • PQFN has very low thermal resistance to PCB • Consumer qualification level • MSL1 (PQFN 5x6 MSL2) • Lead Free, RoHS compliant, halogen free • Advantages • The new MOSFETs offer low RDS(on) and Qg and are suited to point-of-load synchronous buck converter applications between 4A and 15A per MOSFET. • The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads. • Depending on the application, the new MOSFETs enable a simplified cost-effective performance upgrade path for existing designs. • Dual SO-8s allow a “two-for-one” exchange to reduce component count, shrinking the PCB area and increasing power density. April 2009