'Majority carriers' diaporamas de présentation

Types of Semiconductors

Types of Semiconductors. Semiconductors can be classified as: Intrinsic Semiconductor. Extrinsic Semiconductor. Extrinsic Semiconductors are further classified as: a. n-type Semiconductors. b. p-type Semiconductors. Intrinsic Semiconductor.

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Solid State Electronics

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Chapter 4

Chapter 4. Photonic Sources. Contents. Review of Semiconductor Physics Light Emitting Diode (LED) - Structure, Material,Quantum efficiency, LED Power, Modulation Laser Diodes - structure, Modes, Rate Equation,Quantum efficiency, Resonant frequencies, Radiation pattern

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8.1 Bipolar integrated circuits

8.1 Bipolar integrated circuits

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Power Electronic Devices

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Transistor

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Qualitative Derivation

Chapter 6. pn Junction Diodes: I - V Characteristics. M ajority carriers. M ajority carriers. Qualitative Derivation. Chapter 6. pn Junction Diodes: I - V Characteristics. Current Flow in a pn Junction Diode.

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Conductivity

Conductivity. Electrical conductivity Energy bands in solids Band structure and conductivity Semiconductors Intrinsic semiconductors Doped semiconductors n-type materials p-type materials Diodes and transistors p-n junction depletion region forward biased p-n junction

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Light Emitting Diodes

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Light Emitting Diodes

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Heterojunctions. MOS structures

ELEKTRONIKOS PAGRINDAI 2008. 1. Heterojunctions. MOS structures. Besides pn junctions metal-semiconductor (MS), metal-oxide-semiconductor (MOS) and other inhomogeneous structures are used in semiconductor devices. Objectives:

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Direct and Indirect Semiconductors

Chapter 3. Carrier Action. P honon. P hoton. P hoton. Direct and Indirect Semiconductors. E - k Diagrams. E c. E c. E v. E v. GaAs, GaN (direct semiconductors). Si, Ge (indirect semiconductors). Large change in momentum is required for recombination

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ECSE-6230 Semiconductor Devices and Models I Lecture 8

ECSE-6230 Semiconductor Devices and Models I Lecture 8. Prof. Shayla Sawyer Bldg. CII, Rooms 8225 Rensselaer Polytechnic Institute Troy, NY 12180-3590 Tel. (518)276-2164 Fax. (518)276-2990 e-mail: sawyes@rpi.edu. April 1, 2014. sawyes@rpi.edu www.rpi.edu/~sawyes/courses.html . 1.

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Lecture #25

OUTLINE BJT: Deviations from the Ideal Base-width modulation, Early voltage Punch-through Non-ideal effects at low | V EB |, high | V EB | Gummel plot Reading: Chapter 11.2. Lecture #25. Measured BJT Common-Emitter Output Characteristics:. Base-Width Modulation.

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Lecture #23

QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = 1.995 High = 25; Low = 18 OUTLINE The Bipolar Junction Transistor Fundamentals Ideal Transistor Analysis Reading: Chapter 10, 11.1. Lecture #23. Base Current Components (Active Bias).

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SEMICONDUCTORS

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6.772/SMA5111 - Compound Semiconductors Lecture 4 - Carrier flow in heterojunctions - Outline

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Electronic Devices Prepared by Kazi Md. Shahiduzzaman

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EE130/230A Discussion 9

EE130/230A Discussion 9. Peng Zheng. MOS Electrostatics (n-type Si). Decrease V G toward more negative values ? the gate electron energy increases relative to that in the Si. Inversion V G < V T Surface inverted to p-type. decrease V G. decrease V G. Accumulation V G > V FB

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