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NE 353: Nano Probing and Lithography

NE 353: Nano Probing and Lithography

NE 353: Nano Probing and Lithography. Introduction. Photon-based lithography: DUV (deep UV), EUV (extreme UV), X-ray Charged-beam based lithography: electron beam, focused ion beam Nanofabrication by molding/printing: soft lithography, nanoimprint

By albert
(452 views)

Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology

Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology

Chemical Mechanical Planarization of TEOS SiO 2 for Shallow Trench Isolation Processes on an IPEC/Westech 372 Wafer Polisher. Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology EMCR 801: MicroE Graduate Seminar October 17, 2005. Outline. STI vs. LOCOS

By payton
(582 views)

半導體封裝測試概論

半導體封裝測試概論

半導體封裝測試概論. 講者 王量玄. 大綱. 半導體材料及相關應用領域 積體電路種類 積體電路製造 封裝技術發展 傳統封裝與晶圓級封裝 (wafer level CSP) 測試. 半導體材料及相關應用領域. 積體電路種類. 邏輯 (Logic) : CPU , 晶片組 (Chip_Set), 繪圖晶片 …… .. 記憶體 (Memory):ROM,SRAM,DRAM,Flash …. 積體電路製程. 封裝技術發展 ASE Assembly Milestone. 傳統封裝與晶圓級封裝 (wafer level CSP). 傳統封裝

By nelly
(621 views)

Flip Chip and Wafer Level Packaging Technology at Hong Kong University of Science and Technology 香港科技大學倒裝焊与晶片級封裝技術的研究

Flip Chip and Wafer Level Packaging Technology at Hong Kong University of Science and Technology 香港科技大學倒裝焊与晶片級封裝技術的研究

Flip Chip and Wafer Level Packaging Technology at Hong Kong University of Science and Technology 香港科技大學倒裝焊与晶片級封裝技術的研究. Why Flip Chip?. Better manufacturing yield than wirebond for high pin-count chips. 對于高密度引腳芯片,成品率优于丝键合。 Faster manufacturing through-put than wirebond for high pin-count chips.

By bedros
(1478 views)

Global 3D IC Market worth $6.55 billion at CAGR of 16.9% by

Global 3D IC Market worth $6.55 billion at CAGR of 16.9% by

The recent report of marketsandMarkets about 3D IC Market forecast that the 3D IC market is expected to reach $6.55 billion by end of 2016 at a CAGR of 16.9%, Followed by North America 35% and Asia is observed to hold the highest share of around 40%.

By mnmrahulsan
(222 views)

NE 353: Nano Probing and Lithography

NE 353: Nano Probing and Lithography

NE 353: Nano Probing and Lithography. Introduction. Photon-based lithography: DUV (deep UV), EUV (extreme UV), X-ray Charged-beam based lithography: electron beam, focused ion beam Nanofabrication by molding/printing: soft lithography, nanoimprint

By lyn
(514 views)

Total Dose and SEE of Metal-To-Metal Antifuse FPGA

Total Dose and SEE of Metal-To-Metal Antifuse FPGA

Total Dose and SEE of Metal-To-Metal Antifuse FPGA. Outline. 1. Introduction to M2M antifuse FPGA 2. Total Ionizing Dose 3. Single Event Effects SEU SEL SEDR 4. Summary. RT54SX. 16k, 32k, 72k gate antifuse FPGA 0.6 m m (3.3/5.0V), 0.25 m m (2.5/3.3/5.0V) CMOS technology

By vachel
(114 views)

Chia-Chia Hu Evangelos Kalogiropoulos Pragnesh Podar Joseph Vaccaro Dec 2, 2008

Chia-Chia Hu Evangelos Kalogiropoulos Pragnesh Podar Joseph Vaccaro Dec 2, 2008

MEMC Electronic Materials Inc. (WFR). Chia-Chia Hu Evangelos Kalogiropoulos Pragnesh Podar Joseph Vaccaro Dec 2, 2008. Presentation Outline. Company Overview Macroeconomic review and industry trends Historical Financial Analysis Portfolio Positioning Peer group comparison

By astin
(179 views)

A simulation study of double side silicon strip detector for the GLC intermediate tracker

A simulation study of double side silicon strip detector for the GLC intermediate tracker

A simulation study of double side silicon strip detector for the GLC intermediate tracker. S.P. Kim, H.J. Kim*, Y.J. Kwon (Yonsei U) Y.J.Kim, H.B.Park (KNU), B.G.Cheon(SKKU), J.Lee (SNU), J.S.Kang (Korea U.) 6 th ACFA workshop Dec. 15-17, ‘03. Simulation. • The purpose

By hiero
(170 views)

Factory Programming Order & VERIFICATION SHEET

Factory Programming Order & VERIFICATION SHEET

FPO ORDER SHEET v1.3. Factory Programming Order & VERIFICATION SHEET. MC80F5132 - MQF. Please fill in the bold areas. 1. Customer Information. 2. Device Information. Company Name. Package. □ 28 SOP(DP) □ Wafer Chip sales code:( ). Application. Order Date.

By blade
(103 views)

Oregon R&D for a Future Linear Collider

Oregon R&D for a Future Linear Collider

Oregon R&D for a Future Linear Collider. Ray Frey DoE Review, Jan 6, 2004. ALCPG leadership – Brau Working group leaders: New Physics - Strom IPBI – Torrence Vertex Detectors – Brau Calorimetry - Frey Context Ongoing R&D beam instrumentation vertex detector calorimeter.

By gomer
(106 views)

Tom Davinson School of Physics

Tom Davinson School of Physics

Tom Davinson School of Physics. DESPEC DSSD Working Group Status & Open Issues. Concept. Super FRS Low Energy Branch (LEB) Exotic nuclei – energies ~50-150MeV/u Implanted into multi-plane DSSD array Implant - decay correlations Multi-GeV DSSD implantation events

By kaida
(98 views)

CMP Pressure Distribution Study Group

CMP Pressure Distribution Study Group

CMP Pressure Distribution Study Group. Final Project Update By Dave Bullen Alia Koch Alicia Scarfo 7/30/1999. Overview. Previous work Photos: The Jumbo 1000 in action Data collection software redesign Final static and dynamic pressure data Numerical work on pad deformation.

By bryony
(127 views)

Stacking Process

Stacking Process

Stacking Process. < Optical Micrograph >. < Scanning Electron Micrograph >. 3 rd Si thinned to 5.5um. 2 nd Si thinned to 5.5um. SiO 2. 1 st Si bottom supporting wafer. “Super Via” 4um in diameter and 12um in height. Three wafers successfully aligned and stacked. 3 rd Si

By april
(120 views)

Integrated circuits(IC)

Integrated circuits(IC)

Integrated circuits(IC).

By moana
(81 views)

BioMEMS Device Fabrication Procedure

BioMEMS Device Fabrication Procedure

BioMEMS Device Fabrication Procedure. Theresa Valentine 8/19/03. Electrode Fabrication. Begin with Pyrex wafer, 100 mm diameter, 0.5 mm thickness Metal deposition E-beam evaporate 90Å Cr and 2000Å Au Must provide Au target Tom Loughran, ECE clean room, tcl@glue.umd.edu Resist patterning

By shea
(218 views)

In Situ Friction Measurements in Chemical Mechanical Planarization

In Situ Friction Measurements in Chemical Mechanical Planarization

In Situ Friction Measurements in Chemical Mechanical Planarization. Jim Vlahakis PhD. Candidate Tufts University 20 February 2006. 1. Introduction. Experimental setup Equipment Data generation Data analysis Results & Discussion Coefficient of Friction (COF) Frequency Analysis

By eithne
(133 views)

An AGDD “XmlFileBuilder” Christopher.Lester@cern.ch

An AGDD “XmlFileBuilder” Christopher.Lester@cern.ch

An AGDD “XmlFileBuilder” Christopher.Lester@cern.ch. AGDD_XmlFileBuilder. Why do we need XmlFile builders? What do we want from them? What can AGDD_XmlFileBuilder do? Where can you get it?. The problems … part 1. AGDD/XML files contain ...

By rosie
(99 views)

Petri Net-Based Scheduling Analysis of Dual-Arm Cluster Tools with Wafer Revisiting

Petri Net-Based Scheduling Analysis of Dual-Arm Cluster Tools with Wafer Revisiting

Petri Net-Based Scheduling Analysis of Dual-Arm Cluster Tools with Wafer Revisiting. Yan Qiao and Naiqi Wu Guangdong University of Technology, China Mengchu Zhou New Jersey Institute of Technology, USA.

By avi
(148 views)

SEMI 3DS-IC Standards Activities (Three-dimensional Stacked Integrated Circuits)

SEMI 3DS-IC Standards Activities (Three-dimensional Stacked Integrated Circuits)

SEMI 3DS-IC Standards Activities (Three-dimensional Stacked Integrated Circuits). Liaison Report September 2012. 3DS-IC Standards Committee Charter. To explore, evaluate, discuss, and create consensus-based specifications, guidelines, and practices that, through voluntary compliance, will;

By bianca
(134 views)

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