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References

References. [1] S. Nakamura, T. Mukai , and M. Senoh , “Candela-class high-brightness InGaN / AlGaN double- heterostructure blue-light-emitting diodes,” Appl . Phys . Lett ., vol. 64, no. 13, pp. 1687–1689, Mar. 1, 1994.

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  1. References [1] S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaNdouble-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett., vol. 64, no. 13, pp. 1687–1689, Mar. 1, 1994. [2] S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, “InGaN-GaNmultiquantum-well blue and green light-emitting diodes,”IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278–283,Mar./Apr. 2002. [3] S. J. Chang, et al., “400-nm InGaN-GaN and InGaN-AlGaNmultiquantumwell light-emitting diodes,” IEEE J. Sel. Topics Quantum Electron.,vol. 8, no. 4, pp. 744–748, Jul./Aug. 2002. [4] Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Muka, “Ultrahigh efficiency white light emitting diodes,” Jpn. J. Appl. Phys., vol. 45, no. 41, pp. L1084–L1086, Oct. 2006. [5] F. A. Pounce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature, vol. 386, pp. 351–359, Mar.1997. [6] X. H. Wu, et al., “Dislocation generation in GaNheteroepitaxy,” J. Cryst. Growth, vols. 189–190, nos. 1–2, pp. 231–243, Jun. 1998. [7] S. W. Lee, et al., “Lattice strain in bulk GaNepilayers grown on CrN/sapphire template,” Appl. Phys. Lett., vol. 94, no. 8, pp. 082105-1–082105-3, Feb. 2009. [8] C. H. Kuo, et al., “Nitride-based light-emitting diodes with p-AlInGaNsurfacelayers,” IEEE Electron. Dev. Lett., vol. 52, no. 10, pp. 2346–2349, Oct. 2005.

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