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c -Si thin-film cell fabrication

c -Si thin-film cell fabrication. c -Si thin-film cell fabrication. p-type, ~4E19 – back-surface field (BSF), 100 nm. p-type, ~5E15 – absorber, 2~3 µm. c -Si. n-type, ~1E20 – emitter, 35 nm. SiNx ARC. GLASS. c-Si thin-film cell fabrication. Solid state crystallisation, 600C, ~25 hrs.

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c -Si thin-film cell fabrication

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  1. c-Si thin-film cell fabrication

  2. c-Si thin-film cell fabrication p-type, ~4E19 – back-surface field (BSF), 100 nm p-type, ~5E15 – absorber, 2~3 µm c-Si n-type, ~1E20 – emitter, 35 nm SiNx ARC GLASS

  3. c-Si thin-film cell fabrication • Solid state crystallisation, 600C, ~25 hrs • Rapid thermal annealing, ~1000C, 1 min • Hydrogenation, ~600C, 20 min H H H H H H

  4. c-Si thin-film cell fabrication LOAD Reflector BSF emitter

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