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SEMILAB’s PRODUCTS for the SEMICONDUCTOR INDUSTRY

SEMILAB’s PRODUCTS for the SEMICONDUCTOR INDUSTRY. SEMILAB Semiconductor Physics Laboratory, Inc. Prielle Kornelia u. 2, H-1117 Budapest, Hungary Tel:36-1-382-4530 Fax: 36-1-382-4532 E-mail: semilab@semilab.hu Web site: www.semilab.com. p/n Tester

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SEMILAB’s PRODUCTS for the SEMICONDUCTOR INDUSTRY

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  1. SEMILAB’s PRODUCTS for the SEMICONDUCTOR INDUSTRY SEMILAB Semiconductor Physics Laboratory, Inc. Prielle Kornelia u. 2, H-1117 Budapest, Hungary Tel:36-1-382-4530 Fax: 36-1-382-4532 E-mail: semilab@semilab.hu Web site: www.semilab.com

  2. p/n Tester for non-contact determination of conductivity type (p or n) of the material in wafers Semiconductor Characterization Systems Wafer Mapping Tools for high speed, high resolution whole wafer mapping of defects and/or contaminants Bulk Microdefect Analyzer for imaging of extended defects (from 20nm to several micron) Deep Level Spectrometer for identification of electrically active point defects Resistivity Tester for non-contact determination of bulk resistivity in blocks and feedstock material

  3. Wafer Mapping Tools WT-2000 Wafer Tester monitoring defects and contamination both in the bulk and in the surface region of silicon wafers Applied measurement techniques: m-PCD for bulk Si Charge-PCD for bare wafers EpiTest for epi wafers SPV for bulk Si V-Q for oxide characterization Eddy current for resistivity mapping

  4. Fe Fe Fe In-line Monitoring Tool WT-3000 model for in-line contamination monitoring • SPC product wafer • Iron contamination mapping - 10x faster than SPV • Full wafer monitoring due to high mapping speed • Integrated minienvironment including FOUP loadport, robot and pre-aligner

  5. Laser Microwave wafer -t/t I = I0 e WT-2000 m-PCD Tool m-PCD (microwave photoconductive decay)technique for mapping crystal growth andprocess induced defects and heavy metal contamination in bulk silicon wafers APPLICATIONS CRYSTAL GROWTH DEFECTS Slip lines Oxygen striations OSF ring PROCESS INDUCED DEFECTS/Fe MAPPING Fe Fe Fe Contaminated vacuum chuck Boat contamination Fe detection

  6. F F/VSPV m-PCD SPV 4 = C(L+1/a) 1 3 VSPV Fe-B pair 2 1 1 L O2 prec. 1 0.1 - Lifetime, ms NFe = C ( ) Lafter2 Lbefore2 oxygen iron 0.01 1.E+13 1.E+15 1.E+17 1.E+11 1/a Injection level, 1/cm3 SPV m-PCD WT-2000 SPV Tool Surface Photovoltage (SPV)technique for mapping heavy metal contamination and crystal defects in the bulk silicon wafer Fe AND O2 MONITORING BY COMBINED m-PCD AND SPV TECHNIQUES IRON CONCENTRATION MAPPING Fe

  7. Laser Microwave Charging wafer 1 Charging 1 1 tmeas tbulk 1 + = tdiff tsurf + WT-2000 Charge-PCD Semilab’s patentednew surface passivation methodapplying controlled charge deposition on to the wafer surface during lifetime mapping provides a highly efficient, reproducible and homogeneous surface recombination elimination on bare wafers. Lifetime map measured with charging without charging taverage=15.7 ms taverage=268 ms Surface /interface characterization Interface recombination velocity map of an oxidized wafer calculated from the lifetime map measured with and without charging on the same wafer

  8. o o 26 A 24 A 1 Theoritical 0.5 Charge Light/Kelvin probe SPV, V Dark- corrected bright Etunnel 0 . . . . ToxElectrical oxide thickness VfbFlatband voltage DitInterface state density Qm Mobile charge VoxOxide voltage Qeff Effective charge Etunnel Tunelleing electric field VsSurface potential VsurfSurface voltage VtunnelTunnel voltage . . . . . . . . . . . . -0.5 100 0 100 -11V Charge, nC/cm2 -6.8V WT-2000 V-Q Tool Fast, non-contact measurement technique, that replace the traditional contact C-V measurements for qualifying the oxide/interface in silicon wafer Electrical oxide thickness Non-contact V-Q combines three non-contact methods: • Corona discharge • Kelvin Probe • Illumination

  9. Light excitation Green laser 532nm Microwave Ssurface Sinterface Oxide or passivation . tepi Epi layer tsubstrate p+ or n+ substrate WT-2000 Epitest Improved m-PCD(microwave photoconductive decay) technique for the characterization of recombination processes in epi structures. Lifetime map Fe concentration map 3 E10 1/cm3 5 E9 1/cm3 14.8ms 13.8ms

  10. Head height control Control electronics High frequency coil WT-2000 Resistivity Mapper Non-contact whole wafer resistivity mapping based on the eddy current technique for the determination of bulk resistivity distribution in silicon wafers Resistivity map Single crystal 8” CZ wafer Multi-crystalline PV material

  11. sample #4 0.5 sample #2 0.4 0.3 Lifetime [µs] 0.2 0.1 50 100 150 200 250 Temperature [K] HgCdTe InSb WT-2000 MCT Temperature Dependent Lifetime Monitoring minority carrier lifetime as a function of temperature in narrow band gap semiconductors (InSb, HgCdTe, etc.) • Two measurement strategies: • whole wafer mapping at a preselected stabilized temperature • between 85K and 300K • single point lifetime plot as a function of temperature • between 85K and 300K Temperature dependent carrier lifetime measurements

  12. Dislocations Stacking fault laser beamsplitter detector Z scanning wafer X-Y scanning depth SIRM-300 Bulk Microdefect Analyzer Non-contact, non-destructive method based on reflection mode confocal microscopy for detection and analysis of bulk microdefects Denuded zone determination

  13. Light Scattering Tomograph Micro- and Grown-in Defects Analyzer Cumulative BMD number 0 50 100 150 200 0 DNZ depth: 18.9µm 10 y=0.2508x+18.896 20 2 R = 0.9969 Depth [µm] 30 40 50 60 The BMDs scatter the incident light which is recorded by a CCD camera near to the cleaved edge of the sample • High Sensitivity - Detectable Particle Size down to 10 nm • High Depth Resolution - 0.5 μm • High Measurement Speed, 50 sec/2mm x 400 μm • Fully automatic operation including half wafer handling • Stabilized Laser Wavelength • Variable Laser Power Near surface analysis surface 5mm Denuded zone determination

  14. Radiation defects in n-type FZ silicon in p-type FZ silicon Cs-Sii-Cs Ps-Ci(2) Ps-Ci(1) Vac-Vac ? Ci P-Vac Vac-Vac Cs-Oi or C-O-V2 Vac-O Vac-? Influence of annealing on Fe-B pairs Molybdenum Fe-interstitial Fe-B pair DLS-83D Deep Level Spectrometer Detection and identification of trace level of impurities in concentrations down to 109 atoms/cm3 CRYOSTATS IN DIFFERENT TEMPERATURE RANGES • Closed Cycle He-cryostat from 20K to 300K • LN2 cryostats from 77K to 450K: • simple bath type LN2 cryostat • automatic LN2 cryostat with controlled LN2 flow SAMPLE HOLDER with motor driven positioning

  15. Epimet Fast, Repeatable Measurements Without Wafer Damage Epimet delivers the industry’s first realtime, non-contact method to measure epi layer resistivity profiles in production. Fast feedback and the availability of resistivity profile plots and wafer maps aid in troubleshooting for still higher control over epi processes. Resitivity profile measured by Epimet

  16. Typical SCA Curve Nsc Qox Dit Onset on Inversion Inversion Midgap Depletion width, Wd(mm) Accumulation P-type Oxidized Wafer Induced charge, Qind Wafer maps indicating backstreaming Photons (Light) SiO2 + - Wd p-type silicon Source Avg Qox: 8E10q/cm2 Load Avg Qox: 2E11q/cm2 Surface Charge Analyzer The Surface Charge Analyzer allows real-time monitoring of contamination and damage in the critical semiconductor manufacturing processes, such as thermal oxidation, CVD film deposition, metallization, and etch processes.

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