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ERD ITWG Emerging Research Devices Working Group Face-to-Face Meeting MEMORY DISCUSSION

ERD ITWG Emerging Research Devices Working Group Face-to-Face Meeting MEMORY DISCUSSION. Hiramoto-san & Akinaga-san STRJ Presentation Victor Zhirnov and Rainer Waser - Facilitating Grand Hotel Steigenburger Petersberg Rheinblick Koenigswinter (near Bonn), Germany Wednesday April 2, 2008

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ERD ITWG Emerging Research Devices Working Group Face-to-Face Meeting MEMORY DISCUSSION

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  1. ERD ITWGEmerging Research DevicesWorking GroupFace-to-Face MeetingMEMORY DISCUSSION Hiramoto-san & Akinaga-san STRJ Presentation Victor Zhirnov and Rainer Waser - Facilitating Grand Hotel Steigenburger Petersberg Rheinblick Koenigswinter (near Bonn), Germany Wednesday April 2, 2008 8:00 a.m. – 1:30 p.m

  2. Fuse / Antifuse memory? Looks like Ionic memory (cation migration type)? Solid State Electronics 7, 785 (1964) Ag/NiO/Ni

  3. Fuse / Antifuse memory? Looks like Ionic memory (anion migration type)? Bipolar (+2.0V, -2.2V), 100 ns, 0.18 mm CMOS process Muraoka et al., Matsushita Electric Ind. @ IEDM 2007 Similar model: Fujitsu, Sharp, AIST….

  4. To develop quantitative estimates of performance for the various types of memories Fuse / Antifuse memory Unipolar, 5 ns & <100mA Reset operation, 150℃retention Ti:NiO of 0.18 mm CMOS process, Tsunoda et al., (Fujitsu lab.) @ IEDM 2007 150℃ x 1000 h ITRS 2007 Read Time / Demonstrated / Data not available <10ns W/E Time / Demonstrated / 10ns / 5ms 10ns / 10ns 5 ns Reset

  5. To develop quantitative estimates of performance for the various types of memories Ionic effect memory Aratani et al., (Sony) , Cu-Te: GdOx @ IEDM 2007 ITRS 2007 Read Time / Demonstrated / <50ns <10ns W/E Time / Demonstrated / <50ns <5ns Write cycles / Demonstrated / >1E6 >1E7 (Read cycles >1E11 by 10ns-pulse) Schindler et al., (Juelich) , Cu-SiO2 , APL 92, 122910 (2008) Write energy ~ 24nJ (5E-14J by an order estimation @ ITRS 2007)

  6. STRJ-ERD Q1, Transition criteria from ERD to PIDS? Production Q2, Classification of ER Resistance-based Memory What is the difference between Fuse/Antifuse and Ionic memories

  7. STRJ-ERD Q2, Classification of ER Resistance-based Memory OUT: Insulator Resistance Change Memory IN: Fuse / Antifuse memory IN: Ionic memory ex. cation migration, Ag2S, Cu2S ex. anion migration IN: Electronic effect memory ex. Charge trapping, space-charge-limited ex. Mott transition (no experimental data) ex. Ferroelectric barrier effect Waser, MRS 2008 Spring Meeting

  8. A1, Classification of ER Resistance-based Memory Thermal effect memory: # Phase change RAM, >>> PIDS # Fuse / Antifuse memory, Pt/NiO/Pt Ionic effect memory # cation migration # anion migration, STO + Pt/NiO/Pt Electronic effect memory ex. Charge trapping ex. Mott transition (no experimental data) ex. Ferroelectric barrier effect Waser, MRS 2008 Spring Meeting

  9. A2, Classification of ER Resistance-based Memory (Thermal effect memory): # Phase change RAM Filament memory # complex metal oxide # chalcogenide (glass) # organic materials, incl. Cu:TCNQ Electronic effect memory ex. Charge trapping ex. Mott transition (no experimental data) ex. Ferroelectric barrier effect YAGAMI, STRJ ERD

  10. Agreed A3, Classification of ER Resistance-based Memory Thermal Phase change memory: # PCRAM, >>> PIDS, Nanowired PRAM # Fuse / Antifuse memory, Pt/NiO/Pt, Electrochemical memory # cation migration, Cu:TCNQ? # anion migration, so-called ReRAM Electronic effect memory ex. Charge trapping ex. Mott transition (no experimental data) ex. Ferroelectric barrier effect AKINAGA, STRJ ERD

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