1 / 19

Memristance and Memcapacitance Modeling of Thin Film Devices Showing Memristive Behavior

Memristance and Memcapacitance Modeling of Thin Film Devices Showing Memristive Behavior. Mohamed G. Ahmed, Kyoungrok Cho, and Tae-Won Cho College of Electrical and Computer Engineering Chungbuk National University, Republic of Korea. Outline. Introduction

lenci
Télécharger la présentation

Memristance and Memcapacitance Modeling of Thin Film Devices Showing Memristive Behavior

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Memristance and Memcapacitance Modeling of Thin Film Devices Showing Memristive Behavior Mohamed G. Ahmed, Kyoungrok Cho, and Tae-Won Cho College of Electrical and Computer Engineering Chungbuk National University, Republic of Korea

  2. Outline • Introduction • Periodic Table of Circuit Elements • Circuit Elements with memory • Overview of different fabricated memristors • Different behavior characteristics • Memristor Modeling History • Proposed Memristance Model • Capacitance of different junctions • Proposed behavioral memcapacitance model • Conclusions

  3. Introduction Oxygen deficiencies D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008

  4. Periodic Table of Circuit Elements Leon Chua, Nonlinear Circuit Foundations for Nanodevices, Part I The Four-Element Torus, Proceedings of IEEE, vol. 91, 11, Nov. 2003

  5. Circuit Elements with memory Massimiliano Di Ventra et al., Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors, Proceedings of IEEE, vol. 97, 10, 2009

  6. Overview of different fabricated memristors

  7. Memristive Behavior of different fabricated memristors Leon Chua, Resistance switching memories are memristors, Applied Physics A, 102, 2011

  8. Variations in Memristor Behavior

  9. Memristor Modeling History D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008 D. B. Strukov and R. S. Williams, "Exponential ionic drift: fast switching and low volatility of thin-film memristors," Applied Physics A, vol. 94, pp. 515-519, 2009

  10. Memristor Modeling History (Cont.) KamranEshraghian et al., Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation, Proceedings of the IEEE, 2012

  11. Logarithmic Behavior of memristance modeling

  12. Memristance Model [8] Feng Miao et al., Force modulation of tunnel gaps in metal oxide memristive nanoswitches, APPLIED PHYSICS LETTERS 95, 113503, 2009 [16] KamranEshraghian et al., Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation, Proceedings of the IEEE, 2012

  13. Proof of memcapacitance in memristors Xianwen Sun, Guoqiang Li, Li Chen, Zihong Shi and Weifeng Zhang, Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells, Nanoscale Research Letters 2011, 6:599

  14. Proof of memcapacitance in memristors Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristicsof a Au/Ti–HfO2-InP/InGaAsDiode, IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 2, FEBRUARY 2011

  15. Proof of memcapacitance in memristors Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristicsof a Au/Ti–HfO2-InP/InGaAsDiode, IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 2, FEBRUARY 2011

  16. Behavioral Model of Memcapacitance Xmax X(t) Xmin ε permittivity of the sandwiched material A device cross section area Af the effective area of the filaments dmax the gap length without filaments df the gap thickness between filaments and the next electrode

  17. Proposed memristor model

  18. Conclusions • Developing new memristance model is not only simple as behavior models, but it also considered to be physical model using some fitting parameters. • Forcing memristance model to work within boundary conditions by choosing new window function which also satisfies logarithmic fashion of drift velocity with junction current. • Including behavioral modeling of junction memcapacitance to model real memristor device.

  19. Thank you

More Related