1 / 1

p- Si wafer

One path to solving the dopant activation problem: Recessed Channel Transistors with Activation before Layer Transfer. Layer transfer of un-patterned film. No alignment issues. Idea 1 : Activate dopants before layer transfer. n+ Si. Oxide. p Si. p. p. H. p- Si wafer. n+. p- Si wafer.

maisie
Télécharger la présentation

p- Si wafer

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. One path to solving the dopant activation problem:Recessed Channel Transistors with Activation before Layer Transfer Layer transfer of un-patterned film. No alignment issues. Idea 1: Activate dopants before layer transfer n+ Si Oxide p Si p p H p- Si wafer n+ p- Si wafer n+ Idea 3: Thin-film Si  perfect alignment. TSVs minimum feature size. Idea 2: Recessed channel transistors @ sub-400oC n+ • Minimum feature size TSVs • All steps after layer transfer to Cu/low k @ < 400oC! n+ p p MonolithIC 3D Inc. Patents Pending

More Related