'Matching network' diaporamas de présentation

Introduction to Controlling the Output Power of a Transistor Stage

Introduction to Controlling the Output Power of a Transistor Stage. A load network will be designed to maximize the output power obtainable from the Mitsubishi MGF0909A power transistor. The gain associated with maximum power is high enough not to be a concern in this case.

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Introduction

Introduction. The input network of the power amplifier will be designed in the example. The network synthesized will be expanded to allow for biasing of the transistor gate.

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IMPEDANCE Matching

IMPEDANCE Matching. LOADED Q. The Q of a resonant circuit was defined to be equal to the ratio of the center frequency of the circuit to its 3-dB bandwidth The loaded Q of a resonant circuit is dependent upon three main factors. 1. The source resistance ( Rs ).

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Maximum Gain Amplifiers

Maximum Gain Amplifiers. For the two-port network shown below, It is well known that maximum power transfer from the source to the transistor occurs when: Also, the condition for maximum power transfer from the transistor to the load

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A 60-GHz CMOS Direct-Conversion Wireless Transceiver

Ryo Minami Advisor: Kenichi Okada Co-Advisor: Akira Matsuzawa Tokyo Institute of Technology, Japan . A 60-GHz CMOS Direct-Conversion Wireless Transceiver. Outline. Motivation RF Front-end 60GHz injection-locked oscillator(ILO) with 20GHz phase lock loop(PLL) 60GHz transmitter(Tx)

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End Fed Antennas End Fed Long Wires

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Low Noise Amplifier

Low Noise Amplifier. The low noise amplifier is the first stage in almost any modern receivers It is desired that the noise figure of the LNA does not exceed 2 dB IEEE standard Also the output voltage standing wave ratio is to be less than 2 dB IEEE standard

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Impedance Matching (2)

Impedance Matching (2). Outline. Three Element Matching Motivation Pi Network T Network Low Q or Wideband Matching Network Impedance Matching on Smith Chart Two-Element Three-Element Matching Multi-Element Matching Genesis. RV=4.424 Ohms. Component Q= 4.73. Circuit Q.

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Impedance Matching (2)

Impedance Matching (2). Outline. Three Element Matching Motivation Pi Network T Network Low Q or Wideband Matching Network Impedance Matching on Smith Chart Two-Element Three-Element Matching Multi-Element Matching Genesis. RV=4.424 Ohms. Component Q= 4.73. Circuit Q.

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RFID Fall Detection Floor Mat System

RFID Fall Detection Floor Mat System. Andrew Heidt Brian Tippins Zach Brannan Abdirizak Mire Coleman McDaniel. System Overview. Detects patient falls using RFID wrist and foot tags and an antenna embedded in a floor mat

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ENE 490 Applied Communication Systems

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ENE 490 Applied Communication Systems

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Design of 3.67 GHz RF Power Amplifier

Design of 3.67 GHz RF Power Amplifier. Presenters: Akshay Iyer, Logan Woodcock Advisers: Dr. K. Koh, Yahya Mortazavi. Cognitive Radios. Software defined radio Programmed to run by maximizing utility of radio frequency spectrum. Project Goal.

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ELEC 412 RF & Microwave Engineering

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ELEC 412 RF & Microwave Engineering

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185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology

185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology. M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell. Department of Electrical and Computer Engineering, University of California, Santa Barbara.

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The Transmission [T] Matrix

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Diode Detector Notes:

Diode Detector Notes:. You simulate the circuit with 2-port Data element and the capacitor to just find that the data is in and that the circuit is functioning properly. Then you add your detector circuit and simulate to get the graphs and find the Zin.(Add MLOC,

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Diode Detector Notes:

Diode Detector Notes:. You simulate the circuit with 2-port Data element and the capacitor to just find that the data is in and that the circuit is functioning properly. Then you add your detector circuit and simulate to get the graphs and find the Zin.(Add MLOC,

165 views • 15 slides

RF Amplifiers

RF Amplifiers Biasing of Transistors: The Base Emitter junction should be Forward biased and Base Collector junction should be reverse biased. VCC. Rc. R2. Cc. Cb. RL. Rs. R1. RE. Vs. Equivalent Circuit:. Rs. gmvbe. Rc. Rl. RB. r p.

339 views • 14 slides