2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal

1. 2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public Conference Dec 5 2007 Makuhari-Messe, Japan

2. Wireless ITWG Scope • Use wireless IC as technology driver • Roadmap technical requirements, challenges and potential solutions for RF and AMS IC technologies in wireless applications such as cellular phones, WLAN, WPAN, automotive radar, and other emerging standards • Address intersection of silicon with III-V compound semiconductors • 2007 Roadmap added MtM focus

3. Wireless ITWG Methodology Communication System - Protocols/Standards - Frequencies 0.8 – 100GHz - Architecture Circuit Figures-of-Merit - Dynamic Range, Bandwidth - Gain, Noise Figure, Linearity - Phase Noise - Output Power, Gain, PAE - Power Consumption- Thermal Management • Device Figures-of-Merit • Mismatch, Gain • - fT & fMAX • - NFmin & 1/f noise • - Breakdown • - Quality factor, linearity • - Power density, PAE • - COST Wireless Roadmap Material systems : Si, SiGe, GaAs, InP, SiC, GaN Device structures : MOSFET, LDMOS, HBT, MESFET, PHEMT, MHEMT, passives, And More than Moore - Embedded passives and RFMEMs

4. InP InP – – HBT, HEMT GaAs MEHMT HBT, HEMT GaAs MEHMT GaAs GaAs - - HBT, PHEMT HBT, PHEMT SiGe SiGe – – HBT, BiCMOS HBT, BiCMOS GaN GaN - - HEMT HEMT Si Si – – RF CMOS RF CMOS - - MESFET MESFET 0.8 GHz 0.8 GHz 2 GHz 2 GHz 5 GHz 5 GHz 10 GHz 10 GHz 28 GHz 28 GHz 77 GHz 77 GHz 94 GHz 94 GHz DCS DCS WLAN WLAN SAT TV SAT TV GSM GSM PDC PDC SAT SAT WLAN WLAN LMDS LMDS AUTO AUTO Contraband All Weather PCS PCS WLAN WLAN CDMA CDMA GPS GPS TV TV 802.11a 802.11a WLAN WLAN RADAR RADAR Detection 802.11b/g 802.11b/g Landing DECT DECT HomeRF ISM ISM SAT SAT All Weather Hyperlink Hyperlink Bluetooth CDMA CDMA UWB UWB Radio Radio Landing Bluetooth ZigBee Wireless Communication Application Spectrum mm-Wave Roadmap 10Ghz & above Applications drive Noise Figure, Power, Power Added Efficiency, Linearity and Cost

5. 2007 Wireless ITWG Organization Pascal Ancey ST Micro Bobby Brar TSC Joost. Van Beek NXP Herbert Bennett NIST Pascal Chevalier ST Micro David Chow HRL Julio Costa RFMD Stefaan Decoutere IMEC Erwin Hijzen NXP Digh Hisamoto Hitachi Dave Howard Jazz W. Margaret Huang Freescale Anthony Immorlica BAE Systems Andre Jansman NXP Snezana Jenei Infineon Jay John Freescale Alvin Joseph IBM Takahiro Kamei Oki Tom Kazior Raytheon Yukihiro Kiyota Sony Sebastian Liau ITRI Ginkou Ma ITRI Mel Miller Freescale Jan-Erik Mueller Infineon Hansu Oh Samsung Jack Pekarik IBM Marco Racanelli Jazz Bernard Sautreuil ST Micro Sam Shichijo TI Albert Wang UC Riverside Dawn Wang IBM Chuck Weitzel Freescale Geoffrey Yeap Qualcomm Peter Zampardi Skyworks Bin Zhao Freescale Herbert Zirath Chalmers U 2007 New members

6. 2007 Organization Chair: Margaret Huang, Freescale 36 Members /last year 27 Co-chairs: Jan-Erik Mueller, Infineon 20 US, 10 Europe, 6 AP Bin Zhao, Freescale Editor: Herbert Bennett, NIST • Subgroup CMOS Jack Pekarik, IBM • Subgroup Bipolar Marco Racanelli, Jazz • Subgroup Passives Sam Shichijo, TI • Subgroup PA Peter Zampardi, Skyworks Chuck Weitzel, Freescale • Subgroup mm-Wave Tony Immorlica, BAE Systems • Subgroup MEMS Dave Howard, Jazz 2007 Group Lead

7. 2007 Wireless Requirement Tables • CMOS • Performance Analog CMOS • Continue linkage to Low STandby Power (LSTP) CMOS roadmap with 1 year lag (Supply Voltage, Tox, Gate length ) • RF&AMS parameters including: Ft/Fmax. Noise Fig, Gm/Gds, 1/f noise and Vt matching • Precision Analog CMOS • Thick gate oxide CMOS • No update for 2007 • New 2007, CMOS requirements for mmWave • Link to High Performance CMOS roadmap with 2 year lag • Added RF parameters: Ft/Fmax. Noise Fig @ 24 & 60 GHz

8. 2007 Wireless Requirement Tables • Bipolar • 3 Separate Bipolar devices: • High Voltage – “typical” low-cost bipolar device • High Speed – mm-Wave applications • PA – power amplifier applications • Focus on high speed and PA bipolar as drivers • 2007 • reduce high speed device Ft scaling (delay 300Ghz by 1 yr and 500GHz by 5 yrs). Adjust Fmax, JC and BVCEO scaling accordingly. Added Noise Fig @ 60GHz • Revised PA NPN parameters, aligned to PA battery voltage • On-Chip Passives • 3 applications: Analog, RF and Power Amplifier • Devices include: Capacitors, Resistors, Inductors, Varactors • 2007 add MOM RF capacitor

9. 2007 Wireless Requirement Tables • Power Amplifier • Handset : HBT & FET, III-V and Si • 2007 add end-of-life battery voltage, FET/HBT integration for integrated bias circuit design, on-chip switch integration (for stage by-passing). • Emerging markets driving PA to a cost/performance driven and a cost only driven applications. Cost-only market driving silicon single chip alternatives. • Base Station: Cellular and emerging WiMAX • Required relatively high RF power, LDMOS & III-V FET • 2007 drop SiC device, , displace by GaN device • mm-Wave • Dominated by III-V (GaAs MESFET, GaAs PHEMT, InP HEMT, GaAs MHEMT, GaN HEMT, InP HBT ), plus SiGe HBT and silicon NFET (2007) • Low noise amplifier and power devices

10. MtM Focus Multi-Standard Applications • Address multi-band, multi-mode, portable applications • Present device roadmap alone does not enable software defined radio (SDR); needs to: • Address digital radio design requirements • Address Hybrid approach with wideband amplified and matching, filtering and switching network • module assembly and embedded passives requirements (new table) • RFMEMS requirements (new table)

11. Embeded Passives Table • Consider 3 elements on various module substrates such as organic and low-temperature co-fired ceramic (LTCC): • Resistor • Capacitor • Inductor • Requirements for example in: • Tolerance • Temperature linearity • Resonance frequency • Sheet resistance • Breakdown voltage

12. RFMEMS Table • Focus on 4 elements: • BAW • Resonator • Switch capacitive contact and • Switch metal contact • Requirements in: • Design tool • Packaging • Performance driver and • Cost driver

13. Wireless Working Group Key Considerations • Traditional Roadmap Drivers: • Cost (scaling, die size, part count) • Power Consumption • Chip Functionality • Non-traditional Roadmap Drivers: • Government regulations determining system spectrum and specifications • Standards and protocols drive frequencies, power and performance • Color coding “Manufacturing solutions exist” does not imply product volume shipment per ITRS definition • RF module form factor (size and height requirements) • Cost / Performance Drives Integration: • Multi-band Multi-mode system applications (embedded passives, filter, switch integration) • Signal Isolation and integrity • Analog Shrink (power supply, area, design innovations)

14. Challenges and Trends • Radio Integration: • Performance and cost trade off for SoC vs SiP solution • Signal isolation - challenge to technologists, designers and EDA tool providers • CAD solution for Integrated Radio SiP design (chip, passive, MEMS, package, tool compatibility, model accuracies) • Device Technology: • Optimizing analog/RF CMOS devices with scaled technologies. Fundamental changes in CMOS device structure device may lead to the need of separate process/chip to support conventional precision analog/RF devices • Cost and performance tradeoff of integrating passive devices • Predictability of battery technology (end-of-life) and its impact on PA roadmap • Compound semiconductor substrate quality, larger wafer, reliability, new thermal management • Design: • Design approach for PA ruggedness • Digitizing analog functions, Software Define Radio (SDR)