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2005 ITRS Public Conference PIDS ITWG Emerging Research Materials Munich, Germany April 13, 2005

2005 ITRS Public Conference PIDS ITWG Emerging Research Materials Munich, Germany April 13, 2005. Jim Hutchby – SRC Mike Garner – Intel. ERM Participants. Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ.

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2005 ITRS Public Conference PIDS ITWG Emerging Research Materials Munich, Germany April 13, 2005

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  1. 2005 ITRS Public Conference PIDS ITWG Emerging Research Materials Munich, Germany April 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

  2. ERM Participants Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ. Alex Bratkovski HP George Bourianoff Intel John Carruthers Port. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo Datta Purdue Univ. Alex Demkov U. Texas Steve Erwin NRL M. Garner Intel, Chair Bruno Ghyselen SOITECH Dan Herr SRC Susan Holl Intel Jim Hutchby SRC Berry Jonker NRL Gerhard Klemick Purdue Univ. Ted Kamins HP Richard Keihl U. Wisc. Phil Kuekes HP Louis Lome IDA Cons. Mark Lundstrom Purdue Kathryn Moler Stanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark Reed Yale Univ. Rafael Reif MIT Dave Robert Air Products Morley Stone DARPA Sadasivan Shankar Intel Shinichi Tagaki U of Tokyo Tom Theis IBM Jim Tour Rice Univ. Ruud Tromp IBM JohnHenry Scott NIST Eric Vogel NIST Victor Zhirnov SRC Igor Zutic NRL Kang Wang UCLA Rainer Waser Aacken U. Stan Williams HP In Kyeong Yoo Samsung

  3. Critical Properties (MIT) Feb 15, ’05 1D Charge State Materials* Feb. 4, ’05 1D Charge State Models* Feb. 17, ’05 Molecular State* Feb. 25, ’05 Locally ordered solid state* Mar. 29, ’05 Spin State Materials * Mar. 30, ‘05 ERM Workshops * Teleconference

  4. Gate S D Devices & Material Interplay Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & meff f(chirality & diameter) Critical Material Functional Properties Material Properties

  5. 1D charge state materials Molecular state materials Coupled dipole-spin state materials Self-assembly mechanisms Increased collaboration between synthesis, metrology and modeling University, Gov’t, National Labs & Industry Strategic Thrust

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