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ITRS Presentation PIDS ITWG Emerging Research Devices July 18, 2001

ITRS Presentation PIDS ITWG Emerging Research Devices July 18, 2001 Jim Hutchby - SRC Marriott - San Francisco PIDS ITWG Novel Devices Working Group Participants George Bourinaoff Intel/SRC Joop Bruines Philips Joe Brewer U. Florida Jim Chung Compaq Peng Fang AMAT

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ITRS Presentation PIDS ITWG Emerging Research Devices July 18, 2001

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  1. ITRS Presentation PIDS ITWGEmerging Research DevicesJuly 18, 2001 Jim Hutchby - SRC Marriott - San Francisco

  2. PIDS ITWG Novel Devices Working GroupParticipants • George Bourinaoff Intel/SRC • Joop Bruines Philips • Joe Brewer U. Florida • Jim Chung Compaq • Peng Fang AMAT • Steve Hillenius Agere • Toshiro Hiramoto Tokyo U. • Jim Hutchby SRC • Dae Gwan Kang Hynix • Mike Forshaw (UC London) • Makoto Yoshimi Toshiba • Kentaro Shibahara Hiroshima U. • Kristin De Meyer IMEC • Tak Ning IBM • Byong Gook Park Seoul N. U. • Luan Tran Micron • Bin Zhao Conexant • Victor Zhirnov SRC/NCSU • Ramon Compano Europe Com • Simon Deleonibus (LETI) • Thomas Skotnickl (ST Me)

  3. Cast a broad net to introduce readers to device and architecture concepts for information processing --- Identify --- --- not endorse Include --- --- not validate Illustrative --- --- not comprehensive (yet) Stimulate --- --- not eliminate Concepts --- --- not hardened solutions Emerging Research DevicesIntroduction and Scope

  4. Fundamental Requirements (partial list) Energy restorative functional process (e.g. gain) Extend microelectronics beyond the domain of CMOS Compelling Motivations (or-ed) Functionally scaleable > 100x beyond CMOS limit or High information processing rate and throughput or Minimum energy per functional operation or Minimum, scaleable cost per function or or Interfaceable with CMOS. Emerging Research DevicesRequirements & Motivations for Beyond CMOS

  5. Tech Vectors Emerging Technology Sequence Quantum computing Defect Tolerant CNN Architecture molecular QCA 3D Integration Logic RSFQ QCA Molecular SET RTD-FET Magnetic RAM Phase Change Nano FG SET Mem Molecular Memory FD SOI Strained Si Non-classical CMOS Vertical TR FinFET Planar dbl gate Time

  6. Application and drivers Maturity (development, demonstrated, concept) Advantages Issues Design challenges Timing Emerging Research DevicesRow Metrics

  7. Emerging Research Logic Devices1PIDS ITWG Emerging Research Devices Working Group 1The time horizon for entries increases from left to right in these tables

  8. Molecular Architecture Defect architecture Tolerant architecture Quantum Computing 3 - D Integration Cellular Nonlinear Quantum Cellular networks Automata CMOS with Quantum Dots Many self Molecular Single electron array Spin resonance transistors, Device dissimilar material assembled switches and architectures NMR devices Implementation systems nanodevices memories Single flux quantum devices Less interconnect High functional Supports Supports Enables utilization of Exponential performance Advantages delay density imperfect memory single electron devices scaling, enables unbreakable Enables mixed No interconnects hardware based at room temperature, cryptography technology solutions computing memory based computing Heat removal Limited fan out Requires pre - Limited Subject to background Extreme application Issues No design tools Low temperatures computing test functionality noise, tight tolerances limitation, extreme Difficult test and technology requirement s measurement Demonstration Demonstration Demonstration Concept Concept Concept Maturity Emerging Research Architectures PIDS ITWG Emerging Research Devices Working Group

  9. The Emerging Research Device Section presents candidate approaches for: Emerging Non Classical CMOS and Memory Devices New beyond-CMOS information processing devices & architectures Other device entries? Additional information needed? Granularity of information? Intent of 3D charts is to relate the emerging technologies to each other in a comparative fashion: Emerging technologies are parameterized in terms of density, speed, cost and energy. Other parameters of interest? Other representations of interest (Analog, RF, Mixed Signal)? Comments/critique of domain representation for CMOS and/or other entries? Major Questions

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