1 / 8

Diodes

Diodes. Ping Hsu Buff Furman John Luk. Power Source. Signal Conditioning. Power Interface. User Interface. Actuator. Sensor. System to Control. ME 110 ME 136 ME 154 ME 157. ME 182 ME 189 ME 195. Mechatronics Concept Map. ME 106 ME 120. Controller (Hardware & Software). ME 106

jonny
Télécharger la présentation

Diodes

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Diodes Ping Hsu Buff Furman John Luk

  2. PowerSource SignalConditioning PowerInterface UserInterface Actuator Sensor System toControl ME 110 ME 136 ME 154 ME 157 ME 182 ME 189 ME 195 Mechatronics Concept Map ME 106 ME 120 Controller(Hardware & Software) ME 106 ME 190 ME 187 ME 106 INTEGRATION ME 106 ME 120 ME 106 ME 154 ME 157 ME 195 ME 120 ME 297A BJ Furman 26JAN06

  3. Diode Types and Circuit Symbols • Diode Types • Signal Diodes • Rectifier Diodes • Light Emitting Diodes • Zener Diodes Symbol: Anode(P) Cathode(N) Actual Device: Anode(P) Cathode(N)

  4. P-N Junction – Forward Bias A Diode is formed by A junction between positively and negatively doped semiconductor material • P Type • Doped with Boron or Gallium(1 Less e-) • N Type • Doped with Arsenic or Phosphorous(1 Extra e-) Anode(P) Cathode(N) P N Holes e- Net current + -

  5. P-N Junction – Reverse Bias • P Type • Doped with Boron or Gallium(1 Less e-) • N Type • Doped with Arsenic or Phosphorous(1 Extra e-) Anode(P) Cathode(N) P N Holes e- No net current -+

  6. I-V Characteristic for a Diode (non-linear) = 1/R I IV Characteristic for a Resistor Reverse Bias V Breakdown Voltage50-1000V 0.6 to 0.7 V for silicon diode Forward Bias Anode Voltage higher than Cathode

  7. Example 1 • Find VD, IR, VR • VD = -10V, VR = 0, IR = 0 + VD - - 10V + + VR- IR

  8. Example 2 • Find VD, IR, VR , R = 1Ω VD = 0.7V VR = 10 – 0.7 = 9.3V IR = 9.3 / 1 =9.3A + VD - + 10V - + VR- IR

More Related