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Enhancing Linearity in CMOS Active Resistors using Complementary Computational Circuits

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10 diapositives · 214 Views · Sep 23, 2014

This paper introduces an innovative technique for improving linearity in CMOS active resistors by employing two complementary functions. The approach aims to reduce silicon area with advantages including reduced complexity, improved frequency response, enhanced linearity, extended input range, and low-voltage operation. The study includes theoretical analyses of key circuit components and simulated results, demonstrating enhanced accuracy and reduced complexity. The proposed technique shows promising results with minimal linearity error and substantial area reduction.

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Enhancing Linearity in CMOS Active Resistors using Complementary Computational Circuits
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  1. Improved Linearity CMOS Active ResistorBased on Complementary Computational Circuits Cosmin Popa University POLITEHNICA of Bucharest Faculty of Electronics, Telecommunications and Information Technology

  2. 1. INTRODUCTION • An original improved linearization technique for a CMOS active resistor • will be further presented • The main goal: reducing the silicon area • The linearization technique: the utilization of two complementary functions • Advantages: • - reduced complexity • - improved frequency response • - improved linearity • - extended input range • - low-voltage operation Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  3. 2. THEORETICAL ANALYSIS The block diagram of the active resistor circuit Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  4. 2. THEORETICAL ANALYSIS The voltage-current squarer It results: • Advantages: • improved accuracy • reduced complexity • good frequency response Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  5. 2. THEORETICAL ANALYSIS The current-mode square-root circuit • Advantages: • improved accuracy • reduced complexity • good frequency response So: Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  6. 2. THEORETICAL ANALYSIS DIV circuit It results: Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  7. 2. THEORETICAL ANALYSIS The linear characteristic of the active resistor It results: Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  8. 2. THEORETICAL ANALYSIS The second-order effects • Channel-length modulation: • Mobility degradation: It results: Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  9. 3. SIMULATED RESULTS The SPICE simulation of the current-voltage characteristic Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest

  10. 4. CONCLUSIONS • An original improved linearization technique for a CMOS active resistor • has been presented • The linearization technique: the utilization of two complementary functions • Advantages: • - reduced complexity • - improved frequency response • - improved linearity • - extended input range • - low-voltage operation • Results: - small linearity error • - important area reduction Cosmin Popa, Faculty of Electronics,Telecommunications and Information Technology, Bucharest