1 / 8

STT-RAM Project

STT-RAM Project. Initial Estimates and Results of Cell Sizing. Expected MTJ Parameters (Ilya/Pedram). I-STT R P ≈ 500-700 Ω TMR ≈ 100-120% Lowest write energy: V WRITE ≈ 0.6-1V t PULSE ≈ 1-5ns C-STT R P ≈ 600-800 Ω TMR ≈ 30-50% Lowest write energy: V WRITE ≈ 1.2-2.0V

natara
Télécharger la présentation

STT-RAM Project

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. STT-RAM Project Initial Estimates and Results of Cell Sizing

  2. Expected MTJ Parameters (Ilya/Pedram) • I-STT • RP ≈ 500-700Ω • TMR ≈ 100-120% • Lowest write energy: • VWRITE ≈ 0.6-1V • tPULSE ≈ 1-5ns • C-STT • RP ≈ 600-800Ω • TMR ≈ 30-50% • Lowest write energy: • VWRITE ≈ 1.2-2.0V • tPULSE ≈ 0.2-0.5ns

  3. Reference SRAM Cell • For IBM65: F = 0.1μm • SRAM Size: 0.625μm2 = 62.5F2 ~1.087μm ~0.575μm

  4. STT-RAM Cell Sizing • For a 2 finger device, cell area is approx: 0.61μm x (WFINGER + 0.2μm) • 50F2 → 620nm/50nm x2 • 35F2 → 380nm/50nm x2 • 25F2 → 220nm/50nm x2 27.5 F2 52.5 F2 (OLD CELLS)

  5. I-STT Results for “Balanced” Voltage • VWL = 1.0V • VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120% • VWL = 1.2V (15-40% increase in IWRITE/VWRITE) • VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120%

  6. I-STT Results for “Balanced” Current • VWL = 1.0V • VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120% • VWL = 1.2V (15-40% increase in IWRITE/VWRITE) • VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120%

  7. C-STT Results for “Balanced” Voltage • VWL = 1.0V • VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50% • VWL = 1.2V (15-40% increase in IWRITE/VWRITE) • VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50%

  8. C-STT Results for “Balanced” Current • VWL = 1.0V • VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50% • VWL = 1.2V (15-40% increase in IWRITE/VWRITE) • VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50%

More Related