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Wafer Fabrication

Wafer Fabrication. Nam Nguyen Todd Allen Dipesh Chasmawala Daniel Canales Inoke Hemaloto Cheng Hsiao. Overview (1/3). Crystal Structure Monocrystalline An existing monocrystalline silicon serves as a seed for uniform crystal growth Polycrystalline

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Wafer Fabrication

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  1. Wafer Fabrication Nam Nguyen Todd Allen Dipesh Chasmawala Daniel Canales Inoke Hemaloto Cheng Hsiao

  2. Overview (1/3) • Crystal Structure • Monocrystalline • An existing monocrystalline silicon serves as a seed for uniform crystal growth • Polycrystalline • Consists of a multitude of fine-grained gray crystals

  3. Overview (2/3) • Diffusion • Process in which the dopants diffuse to a certain junction depth and forms a doped region • Deposition • Heat the wafer and external source of dopant atoms to form a shallow heavily doped region • Drive • External dopant source is removed and wafer is heated for a prolonged period of time to drive the dopants deeper

  4. Overview (3/3) • Ion Implantation • Accelerates dopant atoms so that they can penetrate several microns of the silicon crystal • Causes damage to the crystal lattice that must be repaired by annealing

  5. Silicon Deposition

  6. What is silicon deposition? • A film of pure or doped silicon that is ‘grown’ onto an existing wafer. • There are 2 types of crystal lattices formed from the process. Each lattice depends on the crystal structure that the silicon is applied to.

  7. Mono crystal Requires contact with the mono crystalline wafer to act as a ‘seed’ for crystal growth Poly crystal Consists of fine grains of silicon formed when no contact with the underlying crystalline lattice is made The 2 Types of Crystal Formed

  8. Epitaxy (epi) • Epitaxy is the type of silicon deposition that results in single crystal growth due to contact with a suitable crystalline lattice. • Epitaxy usually performed using the wafer, for economic reasons.

  9. Different Methods for Growing an epi Layer. • There are 2 types of epitaxy described in our textbooks • The first is liquid-phase epitaxy • The second is low pressure chemical vapor deposition (LPCVD) • There are several other methods for producing an epi layer

  10. Liquid-Phase Epitaxy • Molten semiconductor material is poured directly onto wafer • After allowing material to cool for a specified time the non-bonded material is wiped away • Wafer must then be reground and polished for further processing

  11. Drawbacks to Liquid-Phase Epitaxy • Considered as economically undesirable due to the costs incurred to repolish the wafer after each step • Also it is difficult to accurately control the thickness of the epi layer in this process

  12. LPCVD Method • Wafers are mounted on an inductively heated block and a mixture of Dichlorosilane and hydrogen gas is passed over the wafers. These gases react at the wafer surface to create a slow growing layer monocrystalline silicon.

  13. Advantages of LPCVD Method • The rate of silicon growth can be regulated by varying the temperature, pressure, and gas mixture. • No polishing is required as the vapor deposited silicon will faithfully reproduce the structure of the underlying lattice. • The epitaxial film can also be doped by adding small amounts of gaseous dopants such as phosphine or diborane.

  14. ADVANTAGES Create stacks of differently doped layers useful in the creation of bipolar transistors Create buried layers DISADVANTAGES Time required to grow silicon layers High cost of equipment used in process Advantages / Disadvantages of Epitaxy

  15. Buried Layers • Epitaxy can create layers of differently doped silicon useful in the creation of bipolar transistors. • By using epitaxy over a N+ region a heavily doped emitter region with low emitter to base resistance is created.

  16. NBL Shadow • A slight surface imperfection arises from the oxidation caused during the annealing of the N+ implant • As the epitaxial layer grows this imperfection will be reproduced at the end of the growth cycle

  17. Polysilicon Deposition • Formed when no seed lattice is available, the silicon will form in small grains. Grain size depends upon conditions of the deposition as well as heat treatments.

  18. NBL Shadow • The imperfection will maintain the same geometry as the substrate imperfection but may be moved laterally, known as pattern shift • Following photomasks can use the NBL shadow for alignment purposes. This requires an offset due to the pattern shift

  19. ADVANTAGES Withstand high temperatures (better then al) for annealing source and drain Create narrow resistors with less parasitics Can be used as metallization layer DISADVANTAGES Grain boundaries represent lattice defects which allow high leakage current, not used for PN junctions Advantages / Disadvantages of Polysilicon Deposition

  20. Metallization • The active elements of an integrated circuit are connected by patterned wiring • The wiring is consists of layers of metal and polysilicon separated by insulators, usually deposited oxides

  21. Metallization Process • A layer of oxide is grown or deposited over the entire wafer • A photo etching process removes the oxide from areas desired for metallization contact • A thin film of metal is then applied • The metal is etched off • An integrated circuit may have multiple metallization layers to reduce cost

  22. Deposition and Removal of Al • Most metallization systems employ Al or Al alloys for the primary interconnection layers • Al almost conducts as well as Cu and Ag and will readily deposit in thin films that adhere to all the materials used in the fabrication of integrated circuits

  23. Sintering • Sintering creates Ohmic contacts • A brief period of heating will make a thin film of Al-doped silicon (sintering) • The Al-Si alloy causes a heavily doped P-type diffusion that bridges the P-type silicon • Also form Ohmic contact with heavily doped N-type silicon

  24. Sintering Failures • Sintering causes some Al to dissolve into the Si • Some Al diffusions are so thin that the Al can erode completely, called contact spiking • CS was first observed in the emitter regions of NPN transistors so CS is also known as emitter punchthrough • CS is minimized by replacing Al with a saturated Al-Si alloy

  25. Electromigration • Caused by heavy current flow, carriers flowing through the metal collide with the lattice atoms • At current densities of several million amps per cm2, impacts will start to cause the metal atoms to move • As the atoms move, small gaps are made that eventually combine to cause an open connection, this is call electromigration • A fraction of a percent Cu added improves resistance to electromigration by an order of magnitude

  26. Step Coverage Problem • As chips become more densely packed, the sidewalls of contacts and vias has become progressively steeper • Evaporated Al does not deposit isotropically, it thins where it crosses oxide steps

  27. Step Coverage Techniques - Reflow • Step coverage is greatly improved if the slope of the side wall is moderated. • By reheating the wafer the oxide will melt and the sidewalls form a sloped surface • Pure oxide melts at too high a temperature so it is doped with either/and P and B • If P doped is called phosphosilicate (PSG), if B doped is called borophosphosilicate (BSG)

  28. Drawback to Reflow Solution • Al cannot be applied before reflow as the temperatures involved are to high • Reflow is effective for the first-level metal only • Use of refractory barrier metals is used in subsequent metal layers

  29. Refractory Barrier Metal • Metals chosen for their isotropic deposit on sidewalls (molybdenum Mo, tungsten W, and titanium Ti) • Refractory barrier metals have high melting temps and are unsuited for evaporation deposition like Al • Sputtering is used for low temp deposit

  30. Refractory Barrier Metals • RBM’s posses high resistances and cannot be deposited thickly as easily as Al • Use of a thin film of RBM under Al ensures suitably low resistance • RBM’s are resistant to electromigration • RBM’s practically eliminate emitter punch through so there is little need for Al-Si or Al-Si-Cu alloys

  31. Sillicides • Elemental SI reacts with many metals • Can for low-resistance Ohmic contacts or Schottky diodes • Sillicides have lower resistances than the most heavily doped Si • Can withstand high temperature treatments • Useful in MOS transistors

  32. Interlevel Oxide • Used to insulate metal layers from one another • Vias can be etched through the ILO • Relatively thick ILO can reduce parasitic capacitances • Can cause step problems in vias • No reflow after Al deposited so RBM’s are often used to improved step coverage

  33. Interlevel Nitride • Used to create high capacitance-per-unit-area films • Dielectric constant 2.3 times that of oxide • More prone to pinhole formations that reduce the max voltage • Combination of stacked silicon nitride and oxide are used for dielectric constant between oxide and silicon nitride

  34. Protective Overcoat • Al is fragile to mechanical stress • Al and the underlying Si are vulnerable to certain chemical contaminants • The protective overcoat (PO) forms a seal against mechanical and chemical threats • Most often made from compressive nitride films, some are heavily doped phosphosilicate glasses

  35. Assembly/Packaging

  36. Assembly (1/3) • Performed in an assembly/test site • Finished wafer • Each square represents a completed integrated circuit • Some of the locations in the array are occupied by process control structures and test dice

  37. Finished Wafer

  38. Process Control Structures • Extensive arrays of transistors, resistors, capacitors, diodes, strings of contacts, and vias • Used to evaluate the success or failure of the manufacturing process on the wafer by automated testing equipment • Standardized so the same structures are used for a wide range of products

  39. Test Dice (1/3) • Used to evaluate prototypes of an integrated circuit • Specific to a given product • Dedicated test metal mask allows probing of specific components and subcircuits that would be difficult to access on the finished die

  40. Test Dice (2/3) • Created by adding a few more layers to the database containing the layout of the integrated circuit (e.g., test metal, test nitride) • Layers create a separate set of reticles that are used to expose a few selected spots on the stepped working plate • These locations become unnecessary when testing is completed

  41. Test Dice (3/3) • Wafers created by direct-step-on-wafer (DSW) processing rarely include any test dice because at least one test die must be included in every exposure • If they are included then the test dice will most likely be replaced with product dice after testing is completed to improve the die yield

  42. Assembly (2/3) • After the wafers are tested to ensure the process was performed correctly, each die is individually tested to determine its functionality • Testing of each die typically requires less than three seconds • The percentage of good dice depends on the size of the dice and the complexity of the process • Most products yield 80%, some in excess of 90%

  43. Assembly (3/3) • Wafer probing uses probes to make contact with specific locations on the interconnection pattern of the integrated circuit through holes in the protective overcoat and test each individual die to determine its functionality • Probes are mounted on a probe card that is lowered until the probe comes in contact with the wafer to be tested • The individual dice are sawn apart using a diamond-tipped saw blade, then separated for mounting and bonding

  44. Mounting (Leadframe 1/2) • The first step of packaging an integrated circuit is mounting it on a leadframe • Leadframe Diagram • The leadframe consists of a rectangular mount pad and a series of lead fingers • They are either stamped out or etched using photographic techniques • Usually consists of copper or a copper alloy plated with tin or a tin-lead alloy

  45. Leadframe Diagram

  46. Etched Leadframe

  47. Pressed Leadframe

  48. Mounting (Leadframe 2/2) • Copper is not an ideal material because it has a different coefficient of thermal expansion than silicon • Differential expansion of the die and the leadframe causes mechanical stresses that damages the performance of the die • Most of the materials that possess coefficients of expansion similar to silicon have inferior mechanical and electrical properties • Nickel-iron alloy (Alloy-42) is the most common

  49. Mounting (Epoxy Resin) • The die is usually mounted to the leadframe using an epoxy resin • Sometimes the resin is filled with silver powder to improve thermal conductivity • Helps reduce the stresses produced by thermal expansion of the leadframe and die • Alternate methods provide superior thermal union between the silicon and the leadframe, but at the cost of greater mechanical stress

  50. Mounting (Gold Preform) • The backside of the die can be plated with a metal or a metal alloy and soldered to the leadframe • Rectangle of gold foil called a gold preform can be attached to the leadframe; heating the die causes it to alloy with the gold preform to create a solid mechanical joint • Both allow excellent thermal contact and produce an electrical connection that can be used to connect the substrate of the die to a pin

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